TY - JOUR

T1 - Effect of growth temperature on photoluminescence properties of NH3-MBE grown GaN-on-Si layers

AU - Osinnykh, Igor V.

AU - Malin, Timur V.

AU - Milakhin, Denis S.

AU - Zhuravlev, Konstantin S.

PY - 2024/5

Y1 - 2024/5

N2 - In this paper, we present the results of the investigation of GaN-on-Si layers grown by the ammonia MBE technique within the technologically acceptable temperature range (775 °C–825 °C) by photoluminescence technique. The lowest value of the concentration of defects was obtained at a growth temperature of 825 °C. The increase in the concentration of defects in the film with decreasing growth temperature can be explained by the deviation from the optimum growth temperature and consequently by the deterioration of the crystalline perfection of the GaN layers.

AB - In this paper, we present the results of the investigation of GaN-on-Si layers grown by the ammonia MBE technique within the technologically acceptable temperature range (775 °C–825 °C) by photoluminescence technique. The lowest value of the concentration of defects was obtained at a growth temperature of 825 °C. The increase in the concentration of defects in the film with decreasing growth temperature can be explained by the deviation from the optimum growth temperature and consequently by the deterioration of the crystalline perfection of the GaN layers.

KW - GaN

KW - ammonia-MBE

KW - heterostructures

KW - photoluminescence

KW - point defects

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85197877335&origin=inward&txGid=522536f5bd686dc5498c251492e76e6f

UR - https://www.mendeley.com/catalogue/5a026e93-cd02-3fda-b69e-386ba380a4df/

U2 - 10.18721/JPM.171.107

DO - 10.18721/JPM.171.107

M3 - Conference article

VL - 17

SP - 43

EP - 48

JO - St. Petersburg State Polytechnical University Journal: Physics and Mathematics

JF - St. Petersburg State Polytechnical University Journal: Physics and Mathematics

SN - 2618-8686

IS - 11

ER -