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Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5. / Osinnykh, Igor V.; Malin, Timur V.; Milakhin, Denis S. и др.

в: Japanese Journal of Applied Physics, Том 58, № SC, 27, 01.06.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Osinnykh, IV, Malin, TV, Milakhin, DS, Plyusnin, VF & Zhuravlev, KS 2019, 'Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5', Japanese Journal of Applied Physics, Том. 58, № SC, 27. https://doi.org/10.7567/1347-4065/ab0f1f

APA

Osinnykh, I. V., Malin, T. V., Milakhin, D. S., Plyusnin, V. F., & Zhuravlev, K. S. (2019). Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5. Japanese Journal of Applied Physics, 58(SC), [27]. https://doi.org/10.7567/1347-4065/ab0f1f

Vancouver

Osinnykh IV, Malin TV, Milakhin DS, Plyusnin VF, Zhuravlev KS. Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5. Japanese Journal of Applied Physics. 2019 июнь 1;58(SC):27. doi: 10.7567/1347-4065/ab0f1f

Author

Osinnykh, Igor V. ; Malin, Timur V. ; Milakhin, Denis S. и др. / Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5. в: Japanese Journal of Applied Physics. 2019 ; Том 58, № SC.

BibTeX

@article{6637a582982040feb6630af2b6106a81,
title = "Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5",
abstract = "We report the results of time-resolved and temperature-dependent stationary photoluminescence investigations of the defects responsible for emission in the visible spectral range in heavily silicon-doped Al x Ga1-xN layers grown by molecular beam epitaxy on sapphire substrates. The emission band was attributed to donor-acceptor transitions. The transitions were described using the one-dimensional configuration coordinate model taking into account the high-doping regime. An increase in Al content from 0.56 to 1 leads to an increase in the acceptor ionization energy from 1.4 to 1.87 eV. The value of the Franck-Condon shift is about 1 eV at x = 0.56-0.74 and decreases to 0.8 eV at x > 0.74. The changes in the donor-acceptor transition energy parameters with increasing silicon concentration are discussed.",
keywords = "SI DONORS, GAN, GROWTH, RECOMBINATION, SPECTROSCOPY, TEMPERATURE, CONDUCTION, CENTERS, ENERGY",
author = "Osinnykh, {Igor V.} and Malin, {Timur V.} and Milakhin, {Denis S.} and Plyusnin, {Viktor F.} and Zhuravlev, {Konstantin S.}",
year = "2019",
month = jun,
day = "1",
doi = "10.7567/1347-4065/ab0f1f",
language = "English",
volume = "58",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "SC",

}

RIS

TY - JOUR

T1 - Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5

AU - Osinnykh, Igor V.

AU - Malin, Timur V.

AU - Milakhin, Denis S.

AU - Plyusnin, Viktor F.

AU - Zhuravlev, Konstantin S.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - We report the results of time-resolved and temperature-dependent stationary photoluminescence investigations of the defects responsible for emission in the visible spectral range in heavily silicon-doped Al x Ga1-xN layers grown by molecular beam epitaxy on sapphire substrates. The emission band was attributed to donor-acceptor transitions. The transitions were described using the one-dimensional configuration coordinate model taking into account the high-doping regime. An increase in Al content from 0.56 to 1 leads to an increase in the acceptor ionization energy from 1.4 to 1.87 eV. The value of the Franck-Condon shift is about 1 eV at x = 0.56-0.74 and decreases to 0.8 eV at x > 0.74. The changes in the donor-acceptor transition energy parameters with increasing silicon concentration are discussed.

AB - We report the results of time-resolved and temperature-dependent stationary photoluminescence investigations of the defects responsible for emission in the visible spectral range in heavily silicon-doped Al x Ga1-xN layers grown by molecular beam epitaxy on sapphire substrates. The emission band was attributed to donor-acceptor transitions. The transitions were described using the one-dimensional configuration coordinate model taking into account the high-doping regime. An increase in Al content from 0.56 to 1 leads to an increase in the acceptor ionization energy from 1.4 to 1.87 eV. The value of the Franck-Condon shift is about 1 eV at x = 0.56-0.74 and decreases to 0.8 eV at x > 0.74. The changes in the donor-acceptor transition energy parameters with increasing silicon concentration are discussed.

KW - SI DONORS

KW - GAN

KW - GROWTH

KW - RECOMBINATION

KW - SPECTROSCOPY

KW - TEMPERATURE

KW - CONDUCTION

KW - CENTERS

KW - ENERGY

UR - http://www.scopus.com/inward/record.url?scp=85070781423&partnerID=8YFLogxK

U2 - 10.7567/1347-4065/ab0f1f

DO - 10.7567/1347-4065/ab0f1f

M3 - Article

AN - SCOPUS:85070781423

VL - 58

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - SC

M1 - 27

ER -

ID: 21256198