TY - JOUR

T1 - Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

AU - Petrushkov, Mikhail O

AU - Abramkin, Demid S

AU - Emelyanov, Eugeny A

AU - Putyato, Mikhail A

AU - Komkov, Oleg S

AU - Firsov, Dmitrii D

AU - Vasev, Andrey V

AU - Yesin, Mikhail Yu

AU - Bakarov, Askhat K

AU - Loshkarev, Ivan D

AU - Gutakovskii, Anton K

AU - Atuchin, Victor V

AU - Preobrazhenskii, Valery V

N1 - This work was supported by the Ministry of Science and Higher Education of the Russian Federation (project 075-15-2020-797 (13.1902.21.0024)).

PY - 2022/12/14

Y1 - 2022/12/14

N2 - The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It was found that the introduction of LT-GaAs layers, in combination with post-growth cyclic annealing, reduced the threading dislocation density down to 5 × 106 cm-2, the root-mean-square roughness of the GaAs surface down to 1.1 nm, and the concentration of non-radiative recombination centers in the near-surface GaAs/Si regions down to the homoepitaxial GaAs level. Possible reasons for the improvement in the quality of near-surface GaAs layers are discussed. On the one hand, the presence of elastic deformations in the GaAs/LT-GaAs system led to dislocation line bending. On the other hand, gallium vacancies, formed in the LT-GaAs layers, diffused into the overlying GaAs layers and led to an increase in the dislocation glide rate. It was demonstrated that the GaAs/Si HSs obtained with these techniques are suitable for growing high-quality light-emitting HSs with self-assembled quantum dots.

AB - The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It was found that the introduction of LT-GaAs layers, in combination with post-growth cyclic annealing, reduced the threading dislocation density down to 5 × 106 cm-2, the root-mean-square roughness of the GaAs surface down to 1.1 nm, and the concentration of non-radiative recombination centers in the near-surface GaAs/Si regions down to the homoepitaxial GaAs level. Possible reasons for the improvement in the quality of near-surface GaAs layers are discussed. On the one hand, the presence of elastic deformations in the GaAs/LT-GaAs system led to dislocation line bending. On the other hand, gallium vacancies, formed in the LT-GaAs layers, diffused into the overlying GaAs layers and led to an increase in the dislocation glide rate. It was demonstrated that the GaAs/Si HSs obtained with these techniques are suitable for growing high-quality light-emitting HSs with self-assembled quantum dots.

KW - III-V/Si integration

KW - dislocation filter

KW - low-temperature GaAs

KW - molecular-beam epitaxy

KW - self-assembled quantum dots

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85144884442&origin=inward&txGid=56da810b9a2f805c689b3bac61ec1255

UR - https://www.mendeley.com/catalogue/88891943-b7b8-3f2f-93f9-e6e22aad02d2/

U2 - 10.3390/nano12244449

DO - 10.3390/nano12244449

M3 - Article

C2 - 36558302

VL - 12

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 24

M1 - 4449

ER -