Standard

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. / Petrushkov, Mikhail O; Abramkin, Demid S; Emelyanov, Eugeny A et al.

In: Nanomaterials, Vol. 12, No. 24, 4449, 14.12.2022.

Research output: Contribution to journalArticlepeer-review

Harvard

Petrushkov, MO, Abramkin, DS, Emelyanov, EA, Putyato, MA, Komkov, OS, Firsov, DD, Vasev, AV, Yesin, MY, Bakarov, AK, Loshkarev, ID, Gutakovskii, AK, Atuchin, VV & Preobrazhenskii, VV 2022, 'Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration', Nanomaterials, vol. 12, no. 24, 4449. https://doi.org/10.3390/nano12244449

APA

Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Komkov, O. S., Firsov, D. D., Vasev, A. V., Yesin, M. Y., Bakarov, A. K., Loshkarev, I. D., Gutakovskii, A. K., Atuchin, V. V., & Preobrazhenskii, V. V. (2022). Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials, 12(24), [4449]. https://doi.org/10.3390/nano12244449

Vancouver

Petrushkov MO, Abramkin DS, Emelyanov EA, Putyato MA, Komkov OS, Firsov DD et al. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials. 2022 Dec 14;12(24):4449. doi: 10.3390/nano12244449

Author

Petrushkov, Mikhail O ; Abramkin, Demid S ; Emelyanov, Eugeny A et al. / Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. In: Nanomaterials. 2022 ; Vol. 12, No. 24.

BibTeX

@article{bff61a9811cf4142ab9feb44858c913c,
title = "Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration",
abstract = "The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It was found that the introduction of LT-GaAs layers, in combination with post-growth cyclic annealing, reduced the threading dislocation density down to 5 × 106 cm-2, the root-mean-square roughness of the GaAs surface down to 1.1 nm, and the concentration of non-radiative recombination centers in the near-surface GaAs/Si regions down to the homoepitaxial GaAs level. Possible reasons for the improvement in the quality of near-surface GaAs layers are discussed. On the one hand, the presence of elastic deformations in the GaAs/LT-GaAs system led to dislocation line bending. On the other hand, gallium vacancies, formed in the LT-GaAs layers, diffused into the overlying GaAs layers and led to an increase in the dislocation glide rate. It was demonstrated that the GaAs/Si HSs obtained with these techniques are suitable for growing high-quality light-emitting HSs with self-assembled quantum dots.",
keywords = "III-V/Si integration, dislocation filter, low-temperature GaAs, molecular-beam epitaxy, self-assembled quantum dots",
author = "Petrushkov, {Mikhail O} and Abramkin, {Demid S} and Emelyanov, {Eugeny A} and Putyato, {Mikhail A} and Komkov, {Oleg S} and Firsov, {Dmitrii D} and Vasev, {Andrey V} and Yesin, {Mikhail Yu} and Bakarov, {Askhat K} and Loshkarev, {Ivan D} and Gutakovskii, {Anton K} and Atuchin, {Victor V} and Preobrazhenskii, {Valery V}",
note = "This work was supported by the Ministry of Science and Higher Education of the Russian Federation (project 075-15-2020-797 (13.1902.21.0024)).",
year = "2022",
month = dec,
day = "14",
doi = "10.3390/nano12244449",
language = "English",
volume = "12",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "24",

}

RIS

TY - JOUR

T1 - Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

AU - Petrushkov, Mikhail O

AU - Abramkin, Demid S

AU - Emelyanov, Eugeny A

AU - Putyato, Mikhail A

AU - Komkov, Oleg S

AU - Firsov, Dmitrii D

AU - Vasev, Andrey V

AU - Yesin, Mikhail Yu

AU - Bakarov, Askhat K

AU - Loshkarev, Ivan D

AU - Gutakovskii, Anton K

AU - Atuchin, Victor V

AU - Preobrazhenskii, Valery V

N1 - This work was supported by the Ministry of Science and Higher Education of the Russian Federation (project 075-15-2020-797 (13.1902.21.0024)).

PY - 2022/12/14

Y1 - 2022/12/14

N2 - The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It was found that the introduction of LT-GaAs layers, in combination with post-growth cyclic annealing, reduced the threading dislocation density down to 5 × 106 cm-2, the root-mean-square roughness of the GaAs surface down to 1.1 nm, and the concentration of non-radiative recombination centers in the near-surface GaAs/Si regions down to the homoepitaxial GaAs level. Possible reasons for the improvement in the quality of near-surface GaAs layers are discussed. On the one hand, the presence of elastic deformations in the GaAs/LT-GaAs system led to dislocation line bending. On the other hand, gallium vacancies, formed in the LT-GaAs layers, diffused into the overlying GaAs layers and led to an increase in the dislocation glide rate. It was demonstrated that the GaAs/Si HSs obtained with these techniques are suitable for growing high-quality light-emitting HSs with self-assembled quantum dots.

AB - The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural properties of GaAs/LT-GaAs/GaAs/Si(001) HSs were studied. It was found that the introduction of LT-GaAs layers, in combination with post-growth cyclic annealing, reduced the threading dislocation density down to 5 × 106 cm-2, the root-mean-square roughness of the GaAs surface down to 1.1 nm, and the concentration of non-radiative recombination centers in the near-surface GaAs/Si regions down to the homoepitaxial GaAs level. Possible reasons for the improvement in the quality of near-surface GaAs layers are discussed. On the one hand, the presence of elastic deformations in the GaAs/LT-GaAs system led to dislocation line bending. On the other hand, gallium vacancies, formed in the LT-GaAs layers, diffused into the overlying GaAs layers and led to an increase in the dislocation glide rate. It was demonstrated that the GaAs/Si HSs obtained with these techniques are suitable for growing high-quality light-emitting HSs with self-assembled quantum dots.

KW - III-V/Si integration

KW - dislocation filter

KW - low-temperature GaAs

KW - molecular-beam epitaxy

KW - self-assembled quantum dots

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85144884442&origin=inward&txGid=56da810b9a2f805c689b3bac61ec1255

UR - https://www.mendeley.com/catalogue/88891943-b7b8-3f2f-93f9-e6e22aad02d2/

U2 - 10.3390/nano12244449

DO - 10.3390/nano12244449

M3 - Article

C2 - 36558302

VL - 12

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 24

M1 - 4449

ER -

ID: 42511486