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Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques. / Islamov, D. R.; Gritsenko, V. A.; Lebedev, M. S.
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. ред. / D Misra; S DeGendt; M Houssa; K Kita; D Landheer. Том 80 1. ред. Electrochemical Society, Inc., 2017. стр. 265-270 (ECS Transactions; Том 80).
Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Harvard
Islamov, DR, Gritsenko, VA & Lebedev, MS 2017,
Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques. в D Misra, S DeGendt, M Houssa, K Kita & D Landheer (ред.),
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. 1 изд., Том. 80, ECS Transactions, Том. 80, Electrochemical Society, Inc., стр. 265-270, 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting, National Harbor, Соединенные Штаты Америки,
01.10.2017.
https://doi.org/10.1149/08001.0265ecst
APA
Islamov, D. R., Gritsenko, V. A., & Lebedev, M. S. (2017).
Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques. в D. Misra, S. DeGendt, M. Houssa, K. Kita, & D. Landheer (Ред.),
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR (1 ред., Том 80, стр. 265-270). (ECS Transactions; Том 80). Electrochemical Society, Inc..
https://doi.org/10.1149/08001.0265ecst
Vancouver
Islamov DR, Gritsenko VA, Lebedev MS.
Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques. в Misra D, DeGendt S, Houssa M, Kita K, Landheer D, Редакторы, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. 1 ред. Том 80. Electrochemical Society, Inc. 2017. стр. 265-270. (ECS Transactions). doi: 10.1149/08001.0265ecst
Author
BibTeX
@inproceedings{237a4943092341879e845960b69a4bb1,
title = "Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques",
abstract = "The trap density in hafnia (H1O2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures was determined from transport measurements. In was shown that hydrogen from the fyO-precursor plays an important role in the formation and further passivation of oxygen vacancies in H1O2 films. The equilibrium value of the trap density in hafnia films was found out.",
author = "Islamov, {D. R.} and Gritsenko, {V. A.} and Lebedev, {M. S.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting ; Conference date: 01-10-2017 Through 05-10-2017",
year = "2017",
month = jan,
day = "1",
doi = "10.1149/08001.0265ecst",
language = "English",
isbn = "978-1-62332-470-4",
volume = "80",
series = "ECS Transactions",
publisher = "Electrochemical Society, Inc.",
pages = "265--270",
editor = "D Misra and S DeGendt and M Houssa and K Kita and D Landheer",
booktitle = "SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR",
address = "United States",
edition = "1",
}
RIS
TY - GEN
T1 - Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques
AU - Islamov, D. R.
AU - Gritsenko, V. A.
AU - Lebedev, M. S.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - The trap density in hafnia (H1O2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures was determined from transport measurements. In was shown that hydrogen from the fyO-precursor plays an important role in the formation and further passivation of oxygen vacancies in H1O2 films. The equilibrium value of the trap density in hafnia films was found out.
AB - The trap density in hafnia (H1O2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures was determined from transport measurements. In was shown that hydrogen from the fyO-precursor plays an important role in the formation and further passivation of oxygen vacancies in H1O2 films. The equilibrium value of the trap density in hafnia films was found out.
UR - http://www.scopus.com/inward/record.url?scp=85050035380&partnerID=8YFLogxK
U2 - 10.1149/08001.0265ecst
DO - 10.1149/08001.0265ecst
M3 - Conference contribution
AN - SCOPUS:85050035380
SN - 978-1-62332-470-4
VL - 80
T3 - ECS Transactions
SP - 265
EP - 270
BT - SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR
A2 - Misra, D
A2 - DeGendt, S
A2 - Houssa, M
A2 - Kita, K
A2 - Landheer, D
PB - Electrochemical Society, Inc.
T2 - 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
Y2 - 1 October 2017 through 5 October 2017
ER -
