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Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques. / Islamov, D. R.; Gritsenko, V. A.; Lebedev, M. S.

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. ed. / D Misra; S DeGendt; M Houssa; K Kita; D Landheer. Vol. 80 1. ed. Electrochemical Society, Inc., 2017. p. 265-270 (ECS Transactions; Vol. 80).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Islamov, DR, Gritsenko, VA & Lebedev, MS 2017, Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques. in D Misra, S DeGendt, M Houssa, K Kita & D Landheer (eds), SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. 1 edn, vol. 80, ECS Transactions, vol. 80, Electrochemical Society, Inc., pp. 265-270, 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting, National Harbor, United States, 01.10.2017. https://doi.org/10.1149/08001.0265ecst

APA

Islamov, D. R., Gritsenko, V. A., & Lebedev, M. S. (2017). Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques. In D. Misra, S. DeGendt, M. Houssa, K. Kita, & D. Landheer (Eds.), SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR (1 ed., Vol. 80, pp. 265-270). (ECS Transactions; Vol. 80). Electrochemical Society, Inc.. https://doi.org/10.1149/08001.0265ecst

Vancouver

Islamov DR, Gritsenko VA, Lebedev MS. Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques. In Misra D, DeGendt S, Houssa M, Kita K, Landheer D, editors, SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. 1 ed. Vol. 80. Electrochemical Society, Inc. 2017. p. 265-270. (ECS Transactions). doi: 10.1149/08001.0265ecst

Author

Islamov, D. R. ; Gritsenko, V. A. ; Lebedev, M. S. / Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques. SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR. editor / D Misra ; S DeGendt ; M Houssa ; K Kita ; D Landheer. Vol. 80 1. ed. Electrochemical Society, Inc., 2017. pp. 265-270 (ECS Transactions).

BibTeX

@inproceedings{237a4943092341879e845960b69a4bb1,
title = "Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques",
abstract = "The trap density in hafnia (H1O2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures was determined from transport measurements. In was shown that hydrogen from the fyO-precursor plays an important role in the formation and further passivation of oxygen vacancies in H1O2 films. The equilibrium value of the trap density in hafnia films was found out.",
author = "Islamov, {D. R.} and Gritsenko, {V. A.} and Lebedev, {M. S.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting ; Conference date: 01-10-2017 Through 05-10-2017",
year = "2017",
month = jan,
day = "1",
doi = "10.1149/08001.0265ecst",
language = "English",
isbn = "978-1-62332-470-4",
volume = "80",
series = "ECS Transactions",
publisher = "Electrochemical Society, Inc.",
pages = "265--270",
editor = "D Misra and S DeGendt and M Houssa and K Kita and D Landheer",
booktitle = "SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR",
address = "United States",
edition = "1",

}

RIS

TY - GEN

T1 - Determination of trap density in hafnium oxide films produced by different atomic layer deposition techniques

AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Lebedev, M. S.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The trap density in hafnia (H1O2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures was determined from transport measurements. In was shown that hydrogen from the fyO-precursor plays an important role in the formation and further passivation of oxygen vacancies in H1O2 films. The equilibrium value of the trap density in hafnia films was found out.

AB - The trap density in hafnia (H1O2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures was determined from transport measurements. In was shown that hydrogen from the fyO-precursor plays an important role in the formation and further passivation of oxygen vacancies in H1O2 films. The equilibrium value of the trap density in hafnia films was found out.

UR - http://www.scopus.com/inward/record.url?scp=85050035380&partnerID=8YFLogxK

U2 - 10.1149/08001.0265ecst

DO - 10.1149/08001.0265ecst

M3 - Conference contribution

AN - SCOPUS:85050035380

SN - 978-1-62332-470-4

VL - 80

T3 - ECS Transactions

SP - 265

EP - 270

BT - SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR

A2 - Misra, D

A2 - DeGendt, S

A2 - Houssa, M

A2 - Kita, K

A2 - Landheer, D

PB - Electrochemical Society, Inc.

T2 - 15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting

Y2 - 1 October 2017 through 5 October 2017

ER -

ID: 14864491