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Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films. / Candussio, S.; Budkin, G. V.; Otteneder, M. и др.

в: Physical Review Materials, Том 3, № 5, 054205, 23.05.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Candussio, S, Budkin, GV, Otteneder, M, Kozlov, DA, Dmitriev, IA, Bel'Kov, VV, Kvon, ZD, Mikhailov, NN, Dvoretsky, SA & Ganichev, SD 2019, 'Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films', Physical Review Materials, Том. 3, № 5, 054205. https://doi.org/10.1103/PhysRevMaterials.3.054205

APA

Candussio, S., Budkin, G. V., Otteneder, M., Kozlov, D. A., Dmitriev, I. A., Bel'Kov, V. V., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Ganichev, S. D. (2019). Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films. Physical Review Materials, 3(5), [054205]. https://doi.org/10.1103/PhysRevMaterials.3.054205

Vancouver

Candussio S, Budkin GV, Otteneder M, Kozlov DA, Dmitriev IA, Bel'Kov VV и др. Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films. Physical Review Materials. 2019 май 23;3(5):054205. doi: 10.1103/PhysRevMaterials.3.054205

Author

Candussio, S. ; Budkin, G. V. ; Otteneder, M. и др. / Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films. в: Physical Review Materials. 2019 ; Том 3, № 5.

BibTeX

@article{04425b049dbe4cb2b9c97726904cf530,
title = "Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films",
abstract = "We report on the study of magnetophotogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments.",
keywords = "MISFIT, SPIN, DISLOCATIONS, GROWTH",
author = "S. Candussio and Budkin, {G. V.} and M. Otteneder and Kozlov, {D. A.} and Dmitriev, {I. A.} and Bel'Kov, {V. V.} and Kvon, {Z. D.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and Ganichev, {S. D.}",
note = "Publisher Copyright: {\textcopyright} 2019 American Physical Society.",
year = "2019",
month = may,
day = "23",
doi = "10.1103/PhysRevMaterials.3.054205",
language = "English",
volume = "3",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
number = "5",

}

RIS

TY - JOUR

T1 - Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films

AU - Candussio, S.

AU - Budkin, G. V.

AU - Otteneder, M.

AU - Kozlov, D. A.

AU - Dmitriev, I. A.

AU - Bel'Kov, V. V.

AU - Kvon, Z. D.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Ganichev, S. D.

N1 - Publisher Copyright: © 2019 American Physical Society.

PY - 2019/5/23

Y1 - 2019/5/23

N2 - We report on the study of magnetophotogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments.

AB - We report on the study of magnetophotogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments.

KW - MISFIT

KW - SPIN

KW - DISLOCATIONS

KW - GROWTH

UR - http://www.scopus.com/inward/record.url?scp=85066792293&partnerID=8YFLogxK

U2 - 10.1103/PhysRevMaterials.3.054205

DO - 10.1103/PhysRevMaterials.3.054205

M3 - Article

AN - SCOPUS:85066792293

VL - 3

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 5

M1 - 054205

ER -

ID: 20531662