Research output: Contribution to journal › Article › peer-review
Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films. / Candussio, S.; Budkin, G. V.; Otteneder, M. et al.
In: Physical Review Materials, Vol. 3, No. 5, 054205, 23.05.2019.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films
AU - Candussio, S.
AU - Budkin, G. V.
AU - Otteneder, M.
AU - Kozlov, D. A.
AU - Dmitriev, I. A.
AU - Bel'Kov, V. V.
AU - Kvon, Z. D.
AU - Mikhailov, N. N.
AU - Dvoretsky, S. A.
AU - Ganichev, S. D.
N1 - Publisher Copyright: © 2019 American Physical Society.
PY - 2019/5/23
Y1 - 2019/5/23
N2 - We report on the study of magnetophotogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments.
AB - We report on the study of magnetophotogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments.
KW - MISFIT
KW - SPIN
KW - DISLOCATIONS
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UR - http://www.scopus.com/inward/record.url?scp=85066792293&partnerID=8YFLogxK
U2 - 10.1103/PhysRevMaterials.3.054205
DO - 10.1103/PhysRevMaterials.3.054205
M3 - Article
AN - SCOPUS:85066792293
VL - 3
JO - Physical Review Materials
JF - Physical Review Materials
SN - 2475-9953
IS - 5
M1 - 054205
ER -
ID: 20531662