TY - JOUR

T1 - Comparative nanopatterning of single-component semiconductors using oblique argon cluster ion bombardment

AU - Коробейщиков, Николай Геннадьевич

AU - Николаев, Иван Владимирович

AU - Стишенко, Павел Викторович

AU - Яковлева, Марина Владимировна

N1 - This work was funded by the Russian Science Foundation under grant No. 23–79–10061 (https://rscf.ru/en/project/23-79-10061/). The experimental results were obtained using the equipment of the Shared Equipment Centers “Applied Physics” and “VTAN” of the Novosibirsk State University.

PY - 2025/12

Y1 - 2025/12

N2 - Self-organized surface nanopatterning using a noble gas cluster ion beam is a promising method for modifying the functional properties of materials. In this work, the formation of nanoripples on the surfaces of Ge and Si using an oblique argon cluster ion bombardment was studied. From the initial stage to the development of mature patterns, the parameters of the emerging nanoripples, sputtering yields, and changes in the structural properties of the materials were explored. Experimental results revealed that, under the same conditions, the parameters of resulting nanostructures on the surface of Ge and Si are similar. To advance the understanding of the self-organized nanostructuring process by gas cluster ions, the characteristic stages of patterning have been identified. A comparative analysis of nanopatterning by cluster ions and atomic ions, based on experimental data and molecular dynamic (MD) simulation, is presented. The surface morphology at different stages of nanopatterning is examined. It was found that well-developed nanoripples formed on the surface of semiconductors largely retain the original crystalline structure of the material. A non-uniform distribution of the amorphized layer across the surface of the formed nanostructures was observed. The minimum cluster ion fluence required to initiate patterning of the semiconductor surface has been determined.

AB - Self-organized surface nanopatterning using a noble gas cluster ion beam is a promising method for modifying the functional properties of materials. In this work, the formation of nanoripples on the surfaces of Ge and Si using an oblique argon cluster ion bombardment was studied. From the initial stage to the development of mature patterns, the parameters of the emerging nanoripples, sputtering yields, and changes in the structural properties of the materials were explored. Experimental results revealed that, under the same conditions, the parameters of resulting nanostructures on the surface of Ge and Si are similar. To advance the understanding of the self-organized nanostructuring process by gas cluster ions, the characteristic stages of patterning have been identified. A comparative analysis of nanopatterning by cluster ions and atomic ions, based on experimental data and molecular dynamic (MD) simulation, is presented. The surface morphology at different stages of nanopatterning is examined. It was found that well-developed nanoripples formed on the surface of semiconductors largely retain the original crystalline structure of the material. A non-uniform distribution of the amorphized layer across the surface of the formed nanostructures was observed. The minimum cluster ion fluence required to initiate patterning of the semiconductor surface has been determined.

UR - https://www.scopus.com/pages/publications/105014546361

UR - https://www.mendeley.com/catalogue/c5b38b15-b603-3bb9-a30a-b527949dc888/

U2 - 10.1016/j.mssp.2025.110016

DO - 10.1016/j.mssp.2025.110016

M3 - Article

VL - 200

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

M1 - 110016

ER -