TY - JOUR

T1 - Charge Transport Mechanism in the Forming-Free Memristor Based on PECVD Silicon Oxynitride

AU - Gismatulin, Andrei A.

AU - Kamaev, Gennadiy N.

AU - Volodin, Vladimir A.

AU - Gritsenko, Vladimir A.

N1 - The work was supported by the Russian Science Foundation, project No. 22-19-00369. The electrophysical measurements were conducted using equipment from the Center of Collective Usage “VTAN” NSU supported by the Ministry of Education and Science of Russia by agreement #075-12-2021-697.

PY - 2023/2

Y1 - 2023/2

N2 - A memristor is a new generation memory that merges dynamic random access memory and flash properties. In addition, it can be used in neuromorphic electronics. The advantage of silicon oxynitride, as an active memristor layer, over other dielectrics it is compatibility with silicon technology. It is expected that SiNxOy-based memristors will combine the advantages of memristors based on nonstoichiometric silicon oxides and silicon nitrides. In the present work, the plasma-enhanced chemical vapor deposition (PECVD) method was used to fabricate a silicon oxynitride-based memristor. The memristor leakage currents determine its power consumption. To minimize the power consumption, it is required to study the charge transport mechanism in the memristor in the high-resistance state and low-resistance state. The charge transport mechanism in the PECVD silicon oxynitride-based memristor in high and low resistance states cannot be described by the Schottky effect, thermally assisted tunneling model, Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, or the Shklovskii–Efros percolation model. The charge transport in the forming-free PECVD SiO0.9N0.6-based memristor in high and low resistance states is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined. For the high-resistance state, the trap ionization energy W is 0.35 eV, and the trap concentration Nd is 1.7 × 1019 cm−3; for the low-resistance state, the trap ionization energy W is 0.01 eV, and the trap concentration Nt is 4.6 × 1017 cm−3.

AB - A memristor is a new generation memory that merges dynamic random access memory and flash properties. In addition, it can be used in neuromorphic electronics. The advantage of silicon oxynitride, as an active memristor layer, over other dielectrics it is compatibility with silicon technology. It is expected that SiNxOy-based memristors will combine the advantages of memristors based on nonstoichiometric silicon oxides and silicon nitrides. In the present work, the plasma-enhanced chemical vapor deposition (PECVD) method was used to fabricate a silicon oxynitride-based memristor. The memristor leakage currents determine its power consumption. To minimize the power consumption, it is required to study the charge transport mechanism in the memristor in the high-resistance state and low-resistance state. The charge transport mechanism in the PECVD silicon oxynitride-based memristor in high and low resistance states cannot be described by the Schottky effect, thermally assisted tunneling model, Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, or the Shklovskii–Efros percolation model. The charge transport in the forming-free PECVD SiO0.9N0.6-based memristor in high and low resistance states is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined. For the high-resistance state, the trap ionization energy W is 0.35 eV, and the trap concentration Nd is 1.7 × 1019 cm−3; for the low-resistance state, the trap ionization energy W is 0.01 eV, and the trap concentration Nt is 4.6 × 1017 cm−3.

KW - charge transport

KW - memristors

KW - silicon oxynitride

UR - https://www.scopus.com/inward/record.url?eid=2-s2.0-85147807613&partnerID=40&md5=578a6a5c2a58f9abec7e8581521705b9

UR - https://www.mendeley.com/catalogue/33943a33-45c0-3b92-bfce-63bc3c0635a5/

U2 - 10.3390/electronics12030598

DO - 10.3390/electronics12030598

M3 - Article

VL - 12

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

SN - 2079-9292

IS - 3

M1 - 598

ER -