TY - JOUR

T1 - Charge Transport Mechanism and Trap Origin in Methyl-Terminated Organosilicate Glass Low-κ Dielectrics

AU - Perevalov, Timofey V.

AU - Gismatulin, Andrei A.

AU - Dolbak, Andrei E.

AU - Gritsenko, Vladimir A.

AU - Trofimova, Elena S.

AU - Pustovarov, Vladimir A.

AU - Seregin, Dmitry S.

AU - Vorotilov, Konstantin A.

AU - Baklanov, Mikhail R.

N1 - Funding Information: Experiments and simulation were conducted under the grant of the Russian Foundation for Basic Research (RFBR) (project No. 18‐29‐27006). The low‐κ program conceptualization and selection of the material for this research were conducted under the grant RFBR No. 18‐29‐27022. The recipe development and deposition were conducted under the Ministry of Science and Higher Education of Russia (Nos. FSFZ‐2020‐0022, FEUZ‐2020‐0060, 0306‐2019‐0005). The authors are grateful to the Analytical and Technological Research Center “High Technology and Nanostructured Materials” of NSU. The ab initio computations were carried out at the Novosibirsk State University Supercomputer Center. Publisher Copyright: © 2020 Wiley-VCH GmbH Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2021/2

Y1 - 2021/2

N2 - The charge transport and trap nature responsible for the leakage current through thermally cured methyl-terminated organosilicate low-κ dielectric films are studied. It is found that the Frenkel emission does not describe correctly the charge transport in the studied films. The charge transport occurs via the phonon-assisted electron tunneling between neutral traps as described in the Nasyrov–Gritsenko model. The obtained thermal trap energy value 1.2 eV is close to that for the oxygen divacancy (Si-Si-Si cluster) in SiO2. The electron energy loss spectra, photoluminescence excitation of 2.7 eV blue band spectra, and data from the simulation within the density functional theory for the model SiCOH low-κ structure confirm the presence of oxygen vacancy and divacancy in the studied films. The thermal trap energy value estimated as half the Stokes shift of the blue luminescence also gives a value close to 1.2 eV. It proves the correctness of the Nasyrov–Gritsenko model for describing the charge transport mechanism and the conclusion that oxygen divacancies are traps responsible for the leakage current in the studied low-κ films.

AB - The charge transport and trap nature responsible for the leakage current through thermally cured methyl-terminated organosilicate low-κ dielectric films are studied. It is found that the Frenkel emission does not describe correctly the charge transport in the studied films. The charge transport occurs via the phonon-assisted electron tunneling between neutral traps as described in the Nasyrov–Gritsenko model. The obtained thermal trap energy value 1.2 eV is close to that for the oxygen divacancy (Si-Si-Si cluster) in SiO2. The electron energy loss spectra, photoluminescence excitation of 2.7 eV blue band spectra, and data from the simulation within the density functional theory for the model SiCOH low-κ structure confirm the presence of oxygen vacancy and divacancy in the studied films. The thermal trap energy value estimated as half the Stokes shift of the blue luminescence also gives a value close to 1.2 eV. It proves the correctness of the Nasyrov–Gritsenko model for describing the charge transport mechanism and the conclusion that oxygen divacancies are traps responsible for the leakage current in the studied low-κ films.

KW - charge transport

KW - density functional theory simulations

KW - low-κ dielectrics

KW - photoluminescence

KW - trap energy

KW - dielectrics

KW - OXYGEN-DEFICIENT CENTERS

KW - DEFECTS

KW - OPTICAL-PROPERTIES

KW - MODEL

KW - DAMAGE

KW - INTERLEVEL

KW - FILMS

KW - LUMINESCENCE

KW - LOW-K DIELECTRICS

KW - CONDUCTION

KW - low-&#954

UR - http://www.scopus.com/inward/record.url?scp=85097816348&partnerID=8YFLogxK

U2 - 10.1002/pssa.202000654

DO - 10.1002/pssa.202000654

M3 - Article

AN - SCOPUS:85097816348

VL - 218

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 4

M1 - 2000654

ER -