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Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si. / Yushkov, I.; Gismatulin, A.; Kamaev, G. и др.

в: Russian Microelectronics, Том 54, № 8, 12.2025, стр. 842-847.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Yushkov, I, Gismatulin, A, Kamaev, G, Vergnat, M & Volodin, VA 2025, 'Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si', Russian Microelectronics, Том. 54, № 8, стр. 842-847. https://doi.org/10.1134/S1063739725601699

APA

Yushkov, I., Gismatulin, A., Kamaev, G., Vergnat, M., & Volodin, V. A. (2025). Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si. Russian Microelectronics, 54(8), 842-847. https://doi.org/10.1134/S1063739725601699

Vancouver

Yushkov I, Gismatulin A, Kamaev G, Vergnat M, Volodin VA. Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si. Russian Microelectronics. 2025 дек.;54(8):842-847. doi: 10.1134/S1063739725601699

Author

Yushkov, I. ; Gismatulin, A. ; Kamaev, G. и др. / Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si. в: Russian Microelectronics. 2025 ; Том 54, № 8. стр. 842-847.

BibTeX

@article{77b11701b7064c3cb8845797ee4d6052,
title = "Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si",
abstract = "The comparative analysis of the voltage-ampere characteristics and trap parameters is carried out within the framework of the spatial charge-limited current model in metal-insulator-semiconductor structures ITO/[GeOx](z)[SiO2](1–z) (0.25 ≤ z ≤ 1)/Si with germanosilicate films obtained by electron beam evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on n+-Si and p+-Si substrates. It has determined that the MIS structures of ITO/[GeOx](z)[SiO2](1–z)/Si have a bipolar type of conductivity. The hole type of conductivity dominates in MIS structures with a parameter z > 0.5, and the electronic type of conductivity dominate in structures z ≤ 0.5. It is also determined that the films have at least two types of traps with localized levels energy.",
keywords = "MIS structures, charge transport, charge traps, germanosilicate glass, space charge limited current",
author = "I. Yushkov and A. Gismatulin and G. Kamaev and M. Vergnat and Volodin, {V. A.}",
note = "Yushkov, I., Gismatulin, A., Kamaev, G. et al. Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si. Russ Microelectron 54, 842–847 (2025). https://doi.org/10.1134/S1063739725601699 The authors acknowledge the Shared Research Center “VTAN” of the Novosibirsk State University. The work was carried out within the framework of the State assignment (ISP SB RAS no. FWGW-2025-0023).",
year = "2025",
month = dec,
doi = "10.1134/S1063739725601699",
language = "English",
volume = "54",
pages = "842--847",
journal = "Russian Microelectronics",
issn = "1063-7397",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "8",

}

RIS

TY - JOUR

T1 - Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si

AU - Yushkov, I.

AU - Gismatulin, A.

AU - Kamaev, G.

AU - Vergnat, M.

AU - Volodin, V. A.

N1 - Yushkov, I., Gismatulin, A., Kamaev, G. et al. Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si. Russ Microelectron 54, 842–847 (2025). https://doi.org/10.1134/S1063739725601699 The authors acknowledge the Shared Research Center “VTAN” of the Novosibirsk State University. The work was carried out within the framework of the State assignment (ISP SB RAS no. FWGW-2025-0023).

PY - 2025/12

Y1 - 2025/12

N2 - The comparative analysis of the voltage-ampere characteristics and trap parameters is carried out within the framework of the spatial charge-limited current model in metal-insulator-semiconductor structures ITO/[GeOx](z)[SiO2](1–z) (0.25 ≤ z ≤ 1)/Si with germanosilicate films obtained by electron beam evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on n+-Si and p+-Si substrates. It has determined that the MIS structures of ITO/[GeOx](z)[SiO2](1–z)/Si have a bipolar type of conductivity. The hole type of conductivity dominates in MIS structures with a parameter z > 0.5, and the electronic type of conductivity dominate in structures z ≤ 0.5. It is also determined that the films have at least two types of traps with localized levels energy.

AB - The comparative analysis of the voltage-ampere characteristics and trap parameters is carried out within the framework of the spatial charge-limited current model in metal-insulator-semiconductor structures ITO/[GeOx](z)[SiO2](1–z) (0.25 ≤ z ≤ 1)/Si with germanosilicate films obtained by electron beam evaporation of germanium oxide and silicon oxide powders in vacuum and deposition on n+-Si and p+-Si substrates. It has determined that the MIS structures of ITO/[GeOx](z)[SiO2](1–z)/Si have a bipolar type of conductivity. The hole type of conductivity dominates in MIS structures with a parameter z > 0.5, and the electronic type of conductivity dominate in structures z ≤ 0.5. It is also determined that the films have at least two types of traps with localized levels energy.

KW - MIS structures

KW - charge transport

KW - charge traps

KW - germanosilicate glass

KW - space charge limited current

UR - https://www.scopus.com/pages/publications/105034473482

UR - https://www.mendeley.com/catalogue/e4599476-2b71-3ccf-bef0-3d6c6ad6a9de/

U2 - 10.1134/S1063739725601699

DO - 10.1134/S1063739725601699

M3 - Article

VL - 54

SP - 842

EP - 847

JO - Russian Microelectronics

JF - Russian Microelectronics

SN - 1063-7397

IS - 8

ER -

ID: 75917207