TY - JOUR

T1 - Characterization of Structure, Morphology, Optical and Electrical Properties of AlN–Al–V Multilayer Thin Films Fabricated by Reactive DC Magnetron Sputtering

AU - Миронова, Мария Ивановна

AU - Капишников, Александр Владимирович

AU - Хамуд, Гайсаа

AU - Володин, Владимир Алексеевич

AU - Азаров, Иван Алексеевич

AU - Юшков, Иван Дмитриевич

AU - Камаев, Геннадий Николаевич

AU - Супрун, Евгений

AU - Chirikov, Nikita

AU - Davletkildeev, Nadim A.

AU - Baidakov, Alexey N.

AU - Kovivchak, Vladimir S.

AU - Baranova , Larisa V.

AU - Струнин, Владимир Иванович

AU - Гейдт, Павел Викторович

N1 - Acknowledgments: The authors acknowledge the Shared Research Center “VTAN” of the Novosibirsk State University supported by Minobrnauki of Russia by agreement #075-12-2021-697. The authors acknowledge the Shared Equipment Center “National Center for the Study of Catalysts” at the Boreskov Institute of Catalysis for the provision of TEM preparation and analysis. The authors acknowledge A. O. Geydt and V. O. Isaev for their help with translation and editing and A. L. Aseev for valuable discussions.

PY - 2023/2

Y1 - 2023/2

N2 - Composite thin films of the AlN–Al–V type, grown by magnetron sputtering, were analyzed by several complementary diagnostic methods. The power of the magnetron was used as a variable parameter, while gas flows, chamber pressure, and substrate temperature remained unchanged during the film fabrication. According to grazing incidence X-ray diffraction (GIXRD) results, in most cases, it was possible to obtain an (002)-oriented aluminum nitride (AlN) layer in the films, although, with an increase in the magnetron power to 800 W, the formation of X-ray amorphous AlN was observed. Similarly, according to the Raman results, the width of the peak of the vibrational mode E1, which characterizes the correlation length of optical phonons, also significantly increased in the case of the sample obtained at 800 W, which may indicate a deterioration in the crystallinity of the film. A study of the surface morphology by atomic force microscopy (AFM) and scanning electron microscopy (SEM) showed that the AlN film grows in the form of vertically oriented hexagons, and crystallites emerge on the surface in the form of dendritic structures. During the analysis of the AFM roughness power spectral density (PSD-x) functions, it was found that the type of substrate material does not significantly affect the surface roughness of the AlN films. According to the energy–dispersive X-ray spectroscopy (SEM-EDS) elemental analysis, an excess of aluminum was observed in all fabricated samples. The study of the current-voltage characteristics of the films showed that the resistance of aluminum nitride layers in such composites correlates with both the aluminum content and the structural imperfection of crystallites.

AB - Composite thin films of the AlN–Al–V type, grown by magnetron sputtering, were analyzed by several complementary diagnostic methods. The power of the magnetron was used as a variable parameter, while gas flows, chamber pressure, and substrate temperature remained unchanged during the film fabrication. According to grazing incidence X-ray diffraction (GIXRD) results, in most cases, it was possible to obtain an (002)-oriented aluminum nitride (AlN) layer in the films, although, with an increase in the magnetron power to 800 W, the formation of X-ray amorphous AlN was observed. Similarly, according to the Raman results, the width of the peak of the vibrational mode E1, which characterizes the correlation length of optical phonons, also significantly increased in the case of the sample obtained at 800 W, which may indicate a deterioration in the crystallinity of the film. A study of the surface morphology by atomic force microscopy (AFM) and scanning electron microscopy (SEM) showed that the AlN film grows in the form of vertically oriented hexagons, and crystallites emerge on the surface in the form of dendritic structures. During the analysis of the AFM roughness power spectral density (PSD-x) functions, it was found that the type of substrate material does not significantly affect the surface roughness of the AlN films. According to the energy–dispersive X-ray spectroscopy (SEM-EDS) elemental analysis, an excess of aluminum was observed in all fabricated samples. The study of the current-voltage characteristics of the films showed that the resistance of aluminum nitride layers in such composites correlates with both the aluminum content and the structural imperfection of crystallites.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85149064927&origin=inward&txGid=d4a96763d94ed8d536b065325cefdb38

UR - https://www.mendeley.com/catalogue/b5165ca6-8974-32d4-97fa-1e3a4a75b03a/

U2 - 10.3390/coatings13020223

DO - 10.3390/coatings13020223

M3 - Article

VL - 13

JO - Coatings

JF - Coatings

SN - 2079-6412

IS - 2

M1 - 223

ER -