Standard

Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis. / Tyschenko, Ida; Gutakovskii, Anton; Zhang, Ruonan и др.

в: Materials Letters, Том 373, 137114, 15.10.2024.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Tyschenko, I, Gutakovskii, A, Zhang, R, Vdovin, V, Volodin, V & Popov, V 2024, 'Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis', Materials Letters, Том. 373, 137114. https://doi.org/10.1016/j.matlet.2024.137114

APA

Tyschenko, I., Gutakovskii, A., Zhang, R., Vdovin, V., Volodin, V., & Popov, V. (2024). Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis. Materials Letters, 373, [137114]. https://doi.org/10.1016/j.matlet.2024.137114

Vancouver

Tyschenko I, Gutakovskii A, Zhang R, Vdovin V, Volodin V, Popov V. Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis. Materials Letters. 2024 окт. 15;373:137114. doi: 10.1016/j.matlet.2024.137114

Author

Tyschenko, Ida ; Gutakovskii, Anton ; Zhang, Ruonan и др. / Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis. в: Materials Letters. 2024 ; Том 373.

BibTeX

@article{ea37457c847d45098bae81ee2b14f4db,
title = "Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis",
abstract = "The effect of annealing time on the InSb nanocrystal formation in a silicon-on-insulator structure, containing, near the Si/SiO2 interface, Si and SiO2 regions implanted with Sb+ and In+ ions, respectively, was studied. The annealing temperature was 1100 °C. A change in the nanocrystal growth direction was obtained as the annealing time increased from 1 to 90 min. After the 1 min annealing, the InSb nanocrystals grew within the Si matrix and were faceted. As the annealing time increased to 90 min, the nanocrystals grew from the Si/SiO2 interface into the SiO2 matrix; they had a half-spherical shape. A respective change in the phonon mode was observed, too. The origin of the obtained effect is discussed.",
keywords = "InSb, Ion implantation, Nanocrystals, Si/SiO2 interface, Silicon-on-insulator",
author = "Ida Tyschenko and Anton Gutakovskii and Ruonan Zhang and Vladimir Vdovin and Vladimir Volodin and Vladimir Popov",
note = "The Raman spectra were measured with the equipment of the Collective Use Center “VTAN” at the ATRC Department of NSU. The STEM, HRTEM and EDX investigations were carried out using the equipment of the Collective Access Center “Nanostructures” with the support of the Russian Science Foundation [Project 19-72-30023]. The study was supported by the Ministry of Education and Science of the Russian Federation [Project FWGW-2022-0003].",
year = "2024",
month = oct,
day = "15",
doi = "10.1016/j.matlet.2024.137114",
language = "English",
volume = "373",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Change in the InSb nanocrystal growth direction at the Si/SiO2 interface during ion-beam synthesis

AU - Tyschenko, Ida

AU - Gutakovskii, Anton

AU - Zhang, Ruonan

AU - Vdovin, Vladimir

AU - Volodin, Vladimir

AU - Popov, Vladimir

N1 - The Raman spectra were measured with the equipment of the Collective Use Center “VTAN” at the ATRC Department of NSU. The STEM, HRTEM and EDX investigations were carried out using the equipment of the Collective Access Center “Nanostructures” with the support of the Russian Science Foundation [Project 19-72-30023]. The study was supported by the Ministry of Education and Science of the Russian Federation [Project FWGW-2022-0003].

PY - 2024/10/15

Y1 - 2024/10/15

N2 - The effect of annealing time on the InSb nanocrystal formation in a silicon-on-insulator structure, containing, near the Si/SiO2 interface, Si and SiO2 regions implanted with Sb+ and In+ ions, respectively, was studied. The annealing temperature was 1100 °C. A change in the nanocrystal growth direction was obtained as the annealing time increased from 1 to 90 min. After the 1 min annealing, the InSb nanocrystals grew within the Si matrix and were faceted. As the annealing time increased to 90 min, the nanocrystals grew from the Si/SiO2 interface into the SiO2 matrix; they had a half-spherical shape. A respective change in the phonon mode was observed, too. The origin of the obtained effect is discussed.

AB - The effect of annealing time on the InSb nanocrystal formation in a silicon-on-insulator structure, containing, near the Si/SiO2 interface, Si and SiO2 regions implanted with Sb+ and In+ ions, respectively, was studied. The annealing temperature was 1100 °C. A change in the nanocrystal growth direction was obtained as the annealing time increased from 1 to 90 min. After the 1 min annealing, the InSb nanocrystals grew within the Si matrix and were faceted. As the annealing time increased to 90 min, the nanocrystals grew from the Si/SiO2 interface into the SiO2 matrix; they had a half-spherical shape. A respective change in the phonon mode was observed, too. The origin of the obtained effect is discussed.

KW - InSb

KW - Ion implantation

KW - Nanocrystals

KW - Si/SiO2 interface

KW - Silicon-on-insulator

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85200419546&origin=inward&txGid=e3c604651778c100faa69c295eaf9efb

UR - https://www.mendeley.com/catalogue/a5cddc88-298e-38e0-9e68-c1532f7a6de6/

U2 - 10.1016/j.matlet.2024.137114

DO - 10.1016/j.matlet.2024.137114

M3 - Article

VL - 373

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

M1 - 137114

ER -

ID: 60391116