Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

Standard

Al₂O₃/InGaAs interface passivation by fluorine-containing anodic layers. / Aksenov, M. S.; Valisheva, N. A.; Gorshkov, D. V. и др.

в: Journal of Applied Physics, Том 131, № 8, 085301, 28.02.2022.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Aksenov, MS, Valisheva, NA, Gorshkov, DV, Sidorov, GY, Prosvirin, IP & Gutakovskii, AK 2022, 'Al₂O₃/InGaAs interface passivation by fluorine-containing anodic layers', Journal of Applied Physics, Том. 131, № 8, 085301. https://doi.org/10.1063/5.0078405

APA

Aksenov, M. S., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y., Prosvirin, I. P., & Gutakovskii, A. K. (2022). Al₂O₃/InGaAs interface passivation by fluorine-containing anodic layers. Journal of Applied Physics, 131(8), [085301]. https://doi.org/10.1063/5.0078405

Vancouver

Aksenov MS, Valisheva NA, Gorshkov DV, Sidorov GY, Prosvirin IP, Gutakovskii AK. Al₂O₃/InGaAs interface passivation by fluorine-containing anodic layers. Journal of Applied Physics. 2022 февр. 28;131(8):085301. doi: 10.1063/5.0078405

Author

Aksenov, M. S. ; Valisheva, N. A. ; Gorshkov, D. V. и др. / Al₂O₃/InGaAs interface passivation by fluorine-containing anodic layers. в: Journal of Applied Physics. 2022 ; Том 131, № 8.

BibTeX

@article{5df79ad60e68437abaecbaf6aa46c602,

title = "Al2O3/InGaAs interface passivation by fluorine-containing anodic layers",

abstract = "The morphology, chemical composition, and electronic properties of Al2O3/InGaAs interfaces with and without anodic oxide layers, formed in DC plasma (O2, Ar) with different contents of the fluorinating component (CF4), were studied. It is shown that thin fluorinated anodic oxide layers, in combination with annealing at 300 °C, reduce the density of interface states by a factor of 3-4 over the entire bandgap. The minimum state density values near the midgap determined by the Terman method are about 2 × 1012 eV-1 cm-2. However, it is demonstrated that, in contrast to the Al2O3/InGaAs interface, the interface with a fluorinated oxide is not stable and degrades when heated above 300 °C. ",

author = "Aksenov, {M. S.} and Valisheva, {N. A.} and Gorshkov, {D. V.} and Sidorov, {G. Y.} and Prosvirin, {I. P.} and Gutakovskii, {A. K.}",

note = "Funding Information: The reported study was funded by the Russian Foundation for Basic Research (RFBR), Project No. 20-02-00516. Publisher Copyright: {\textcopyright} 2022 Author(s).",

year = "2022",

month = feb,

day = "28",

doi = "10.1063/5.0078405",

language = "English",

volume = "131",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AMER INST PHYSICS",

number = "8",

}

RIS

TY - JOUR

T1 - Al2O3/InGaAs interface passivation by fluorine-containing anodic layers

AU - Aksenov, M. S.

AU - Valisheva, N. A.

AU - Gorshkov, D. V.

AU - Sidorov, G. Y.

AU - Prosvirin, I. P.

AU - Gutakovskii, A. K.

PY - 2022/2/28

Y1 - 2022/2/28

N2 - The morphology, chemical composition, and electronic properties of Al2O3/InGaAs interfaces with and without anodic oxide layers, formed in DC plasma (O2, Ar) with different contents of the fluorinating component (CF4), were studied. It is shown that thin fluorinated anodic oxide layers, in combination with annealing at 300 °C, reduce the density of interface states by a factor of 3-4 over the entire bandgap. The minimum state density values near the midgap determined by the Terman method are about 2 × 1012 eV-1 cm-2. However, it is demonstrated that, in contrast to the Al2O3/InGaAs interface, the interface with a fluorinated oxide is not stable and degrades when heated above 300 °C.

AB - The morphology, chemical composition, and electronic properties of Al2O3/InGaAs interfaces with and without anodic oxide layers, formed in DC plasma (O2, Ar) with different contents of the fluorinating component (CF4), were studied. It is shown that thin fluorinated anodic oxide layers, in combination with annealing at 300 °C, reduce the density of interface states by a factor of 3-4 over the entire bandgap. The minimum state density values near the midgap determined by the Terman method are about 2 × 1012 eV-1 cm-2. However, it is demonstrated that, in contrast to the Al2O3/InGaAs interface, the interface with a fluorinated oxide is not stable and degrades when heated above 300 °C.

UR - http://www.scopus.com/inward/record.url?scp=85125568855&partnerID=8YFLogxK

U2 - 10.1063/5.0078405

DO - 10.1063/5.0078405

M3 - Article

AN - SCOPUS:85125568855

VL - 131

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

M1 - 085301

ER -

ID: 35635926