Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Activation energy of gold-induced crystallization of amorphous silicon suboxide films. / Zamchiy, A. O.; Baranov, E. A.; Konstantinov, V. O. и др.
в: Materials Letters, Том 323, 132566, 15.09.2022.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Activation energy of gold-induced crystallization of amorphous silicon suboxide films
AU - Zamchiy, A. O.
AU - Baranov, E. A.
AU - Konstantinov, V. O.
AU - Lunev, N. A.
AU - Sakhapov, S. Z.
AU - Korolkov, I. V.
AU - Volodin, V. A.
N1 - Funding Information: The work on materials synthesis and annealing, structural and elemental characterization was financially supported by the Russian Science Foundation, project # 19-79-10143. The study of the optical properties of films was carried out under state contract with IT SB RAS, project No. 121031800218-5. Raman studies were performed using the equipment of the Center of collective usage ‘‘VTAN” in the ATRC department of NSU. XRD studies were performed using the equipment of the Center of collective usage in NIIC SB RAS. Publisher Copyright: © 2022 Elsevier B.V.
PY - 2022/9/15
Y1 - 2022/9/15
N2 - Polycrystalline silicon (poly-Si) films were fabricated by gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiOx, x = 0.2) films at temperatures of 210–275 °C. The films were studied by in situ optical microscopy, Raman spectroscopy, and X-ray diffractometry. The activation energy for AuIC of a-SiO0.2 was determined for the first time to be 1.7 ± 0.1 eV.
AB - Polycrystalline silicon (poly-Si) films were fabricated by gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiOx, x = 0.2) films at temperatures of 210–275 °C. The films were studied by in situ optical microscopy, Raman spectroscopy, and X-ray diffractometry. The activation energy for AuIC of a-SiO0.2 was determined for the first time to be 1.7 ± 0.1 eV.
KW - Activation energy
KW - Gold-induced crystallization
KW - Polycrystalline silicon
KW - Silicon suboxide
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=85131459912&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2022.132566
DO - 10.1016/j.matlet.2022.132566
M3 - Article
AN - SCOPUS:85131459912
VL - 323
JO - Materials Letters
JF - Materials Letters
SN - 0167-577X
M1 - 132566
ER -
ID: 36437389