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Activation energy of gold-induced crystallization of amorphous silicon suboxide films. / Zamchiy, A. O.; Baranov, E. A.; Konstantinov, V. O. et al.

In: Materials Letters, Vol. 323, 132566, 15.09.2022.

Research output: Contribution to journal › Article › peer-review

Harvard

Zamchiy, AO, Baranov, EA, Konstantinov, VO, Lunev, NA, Sakhapov, SZ, Korolkov, IV & Volodin, VA 2022, 'Activation energy of gold-induced crystallization of amorphous silicon suboxide films', Materials Letters, vol. 323, 132566. https://doi.org/10.1016/j.matlet.2022.132566

APA

Zamchiy, A. O., Baranov, E. A., Konstantinov, V. O., Lunev, N. A., Sakhapov, S. Z., Korolkov, I. V., & Volodin, V. A. (2022). Activation energy of gold-induced crystallization of amorphous silicon suboxide films. Materials Letters, 323, [132566]. https://doi.org/10.1016/j.matlet.2022.132566

Vancouver

Zamchiy AO, Baranov EA, Konstantinov VO, Lunev NA, Sakhapov SZ, Korolkov IV et al. Activation energy of gold-induced crystallization of amorphous silicon suboxide films. Materials Letters. 2022 Sept 15;323:132566. doi: 10.1016/j.matlet.2022.132566

Author

Zamchiy, A. O. ; Baranov, E. A. ; Konstantinov, V. O. et al. / Activation energy of gold-induced crystallization of amorphous silicon suboxide films. In: Materials Letters. 2022 ; Vol. 323.

BibTeX

@article{9c5123d9c4984a9099ce3f3a4a1e04ec,
title = "Activation energy of gold-induced crystallization of amorphous silicon suboxide films",
abstract = "Polycrystalline silicon (poly-Si) films were fabricated by gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiOx, x = 0.2) films at temperatures of 210–275 °C. The films were studied by in situ optical microscopy, Raman spectroscopy, and X-ray diffractometry. The activation energy for AuIC of a-SiO0.2 was determined for the first time to be 1.7 ± 0.1 eV.",
keywords = "Activation energy, Gold-induced crystallization, Polycrystalline silicon, Silicon suboxide, Thin films",
author = "Zamchiy, {A. O.} and Baranov, {E. A.} and Konstantinov, {V. O.} and Lunev, {N. A.} and Sakhapov, {S. Z.} and Korolkov, {I. V.} and Volodin, {V. A.}",
note = "Funding Information: The work on materials synthesis and annealing, structural and elemental characterization was financially supported by the Russian Science Foundation, project # 19-79-10143. The study of the optical properties of films was carried out under state contract with IT SB RAS, project No. 121031800218-5. Raman studies were performed using the equipment of the Center of collective usage {\textquoteleft}{\textquoteleft}VTAN” in the ATRC department of NSU. XRD studies were performed using the equipment of the Center of collective usage in NIIC SB RAS. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",
year = "2022",
month = sep,
day = "15",
doi = "10.1016/j.matlet.2022.132566",
language = "English",
volume = "323",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Activation energy of gold-induced crystallization of amorphous silicon suboxide films

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Konstantinov, V. O.

AU - Lunev, N. A.

AU - Sakhapov, S. Z.

AU - Korolkov, I. V.

AU - Volodin, V. A.

N1 - Funding Information: The work on materials synthesis and annealing, structural and elemental characterization was financially supported by the Russian Science Foundation, project # 19-79-10143. The study of the optical properties of films was carried out under state contract with IT SB RAS, project No. 121031800218-5. Raman studies were performed using the equipment of the Center of collective usage ‘‘VTAN” in the ATRC department of NSU. XRD studies were performed using the equipment of the Center of collective usage in NIIC SB RAS. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/9/15

Y1 - 2022/9/15

N2 - Polycrystalline silicon (poly-Si) films were fabricated by gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiOx, x = 0.2) films at temperatures of 210–275 °C. The films were studied by in situ optical microscopy, Raman spectroscopy, and X-ray diffractometry. The activation energy for AuIC of a-SiO0.2 was determined for the first time to be 1.7 ± 0.1 eV.

AB - Polycrystalline silicon (poly-Si) films were fabricated by gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiOx, x = 0.2) films at temperatures of 210–275 °C. The films were studied by in situ optical microscopy, Raman spectroscopy, and X-ray diffractometry. The activation energy for AuIC of a-SiO0.2 was determined for the first time to be 1.7 ± 0.1 eV.

KW - Activation energy

KW - Gold-induced crystallization

KW - Polycrystalline silicon

KW - Silicon suboxide

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85131459912&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2022.132566

DO - 10.1016/j.matlet.2022.132566

M3 - Article

AN - SCOPUS:85131459912

VL - 323

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

M1 - 132566

ER -

ID: 36437389