A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

Standard

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates. / Emelyanov, E. A.; Nastovjak, A. G.; Petrushkov, M. O. и др.

в: Technical Physics Letters, Том 46, № 2, 01.02.2020, стр. 161-164.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Emelyanov, EA, Nastovjak, AG, Petrushkov, MO, Esin, MY, Gavrilova, TA, Putyato, MA, Schwartz, NL, Shvets, VA, Vasev, AV, Semyagin, BR & Preobrazhenskii, VV 2020, 'A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates', Technical Physics Letters, Том. 46, № 2, стр. 161-164. https://doi.org/10.1134/S1063785020020194

APA

Emelyanov, E. A., Nastovjak, A. G., Petrushkov, M. O., Esin, M. Y., Gavrilova, T. A., Putyato, M. A., Schwartz, N. L., Shvets, V. A., Vasev, A. V., Semyagin, B. R., & Preobrazhenskii, V. V. (2020). A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates. Technical Physics Letters, 46(2), 161-164. https://doi.org/10.1134/S1063785020020194

Vancouver

Emelyanov EA, Nastovjak AG, Petrushkov MO, Esin MY, Gavrilova TA, Putyato MA и др. A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates. Technical Physics Letters. 2020 февр. 1;46(2):161-164. doi: 10.1134/S1063785020020194

Author

Emelyanov, E. A. ; Nastovjak, A. G. ; Petrushkov, M. O. и др. / A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates. в: Technical Physics Letters. 2020 ; Том 46, № 2. стр. 161-164.

BibTeX

@article{b016dcc85c72412f8bbdbd2f62c92fd0,

title = "A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates",

abstract = "GaAs nanowires (NWs) were generated on the surface of GaAs(111)B and GaAs(100) substrates from molecular fluxes by the self-catalytic growth method. A mask for NW growth was fabricated by oxidizing the epitaxial silicon layer that was grown on a substrate surface by the molecular beam epitaxy (MBE) method. Silicon was oxidized in purified air without moving the structures out of the vacuum system of the MBE apparatus. The process of Si/GaAs heterostructure oxidation was investigated using single-wave and spectral ellipsometry. The oxidized silicon surface morphology was studied by the atomic force microscopy methods. The scanning electronic microscopy method was used to examine the samples with NWs. The NW density was about 2.6 × 107 and 3 × 107 cm–2 for (111)B and (100), respectively.",

keywords = "atomic force microscopy, ellipsometry, molecular beam epitaxy, nanowires, scanning electronic microscopy, GAAS NANOWIRES",

author = "Emelyanov, {E. A.} and Nastovjak, {A. G.} and Petrushkov, {M. O.} and Esin, {M. Yu} and Gavrilova, {T. A.} and Putyato, {M. A.} and Schwartz, {N. L.} and Shvets, {V. A.} and Vasev, {A. V.} and Semyagin, {B. R.} and Preobrazhenskii, {V. V.}",

year = "2020",

month = feb,

day = "1",

doi = "10.1134/S1063785020020194",

language = "English",

volume = "46",

pages = "161--164",

journal = "Technical Physics Letters",

issn = "1063-7850",

publisher = "PLEIADES PUBLISHING INC",

number = "2",

}

RIS

TY - JOUR

T1 - A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

AU - Emelyanov, E. A.

AU - Nastovjak, A. G.

AU - Petrushkov, M. O.

AU - Esin, M. Yu

AU - Gavrilova, T. A.

AU - Putyato, M. A.

AU - Schwartz, N. L.

AU - Shvets, V. A.

AU - Vasev, A. V.

AU - Semyagin, B. R.

AU - Preobrazhenskii, V. V.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - GaAs nanowires (NWs) were generated on the surface of GaAs(111)B and GaAs(100) substrates from molecular fluxes by the self-catalytic growth method. A mask for NW growth was fabricated by oxidizing the epitaxial silicon layer that was grown on a substrate surface by the molecular beam epitaxy (MBE) method. Silicon was oxidized in purified air without moving the structures out of the vacuum system of the MBE apparatus. The process of Si/GaAs heterostructure oxidation was investigated using single-wave and spectral ellipsometry. The oxidized silicon surface morphology was studied by the atomic force microscopy methods. The scanning electronic microscopy method was used to examine the samples with NWs. The NW density was about 2.6 × 107 and 3 × 107 cm–2 for (111)B and (100), respectively.

AB - GaAs nanowires (NWs) were generated on the surface of GaAs(111)B and GaAs(100) substrates from molecular fluxes by the self-catalytic growth method. A mask for NW growth was fabricated by oxidizing the epitaxial silicon layer that was grown on a substrate surface by the molecular beam epitaxy (MBE) method. Silicon was oxidized in purified air without moving the structures out of the vacuum system of the MBE apparatus. The process of Si/GaAs heterostructure oxidation was investigated using single-wave and spectral ellipsometry. The oxidized silicon surface morphology was studied by the atomic force microscopy methods. The scanning electronic microscopy method was used to examine the samples with NWs. The NW density was about 2.6 × 107 and 3 × 107 cm–2 for (111)B and (100), respectively.

KW - atomic force microscopy

KW - ellipsometry

KW - molecular beam epitaxy

KW - nanowires

KW - scanning electronic microscopy

KW - GAAS NANOWIRES

UR - http://www.scopus.com/inward/record.url?scp=85084010618&partnerID=8YFLogxK

U2 - 10.1134/S1063785020020194

DO - 10.1134/S1063785020020194

M3 - Article

AN - SCOPUS:85084010618

VL - 46

SP - 161

EP - 164

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 2

ER -

ID: 24161963