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1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate. / Feklistov, Konstantin V.; Lemzyakov, Aleksey G.; Abramkin, Demid S. и др.

в: Modern Electronic Materials, Том 12, № 2, 30.06.2026, стр. 95-102.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Feklistov, KV, Lemzyakov, AG, Abramkin, DS, Svit, KA, Pugachev, AM, Volodin, VA, Marin, DV, Spesivsev, EV, Azarov, IA, Safronov, LN, Kochubey, SA, Ershov, KS, Kapishnikov, AV, Shmakov, AN, Shklyaev, AA & Zhivodkov, YA 2026, '1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate', Modern Electronic Materials, Том. 12, № 2, стр. 95-102. https://doi.org/10.3897/j.moem.12.2.205390

APA

Feklistov, K. V., Lemzyakov, A. G., Abramkin, D. S., Svit, K. A., Pugachev, A. M., Volodin, V. A., Marin, D. V., Spesivsev, E. V., Azarov, I. A., Safronov, L. N., Kochubey, S. A., Ershov, K. S., Kapishnikov, A. V., Shmakov, A. N., Shklyaev, A. A., & Zhivodkov, Y. A. (2026). 1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate. Modern Electronic Materials, 12(2), 95-102. https://doi.org/10.3897/j.moem.12.2.205390

Vancouver

Feklistov KV, Lemzyakov AG, Abramkin DS, Svit KA, Pugachev AM, Volodin VA и др. 1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate. Modern Electronic Materials. 2026 июнь 30;12(2):95-102. doi: 10.3897/j.moem.12.2.205390

Author

Feklistov, Konstantin V. ; Lemzyakov, Aleksey G. ; Abramkin, Demid S. и др. / 1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate. в: Modern Electronic Materials. 2026 ; Том 12, № 2. стр. 95-102.

BibTeX

@article{4f198ce1dfc345849b1f143964f49780,
title = "1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate",
abstract = "In2O3 : Er films were synthesized on silicon substrates by the RF magnetron sputter deposition. The solid solution ((In1-xErx)2O3) is formed here. The 1.534 µm erbium electroluminescence is observed by the current through the investigated heterostructure substrate-n-Si\In2O3 : Er-film\ITO-contact. The Er excitation model by the electron-hole recombination is proposed as follow. The electron current flows at the indium oxide conduction band. And the hole current flows at the channel in the middle of the In2O3 : Er bandgap. The hole channel is formed by the defect state density spreading from the valence band edge into the bandgap. Therefore the electron-hole recombination energy is lower than the indium oxide bandgap and equals to the 1.56 eV. Then the electron-hole recombination excites in resonance the third excited state of Er3+ 4I9/2 (1.53 eV). Then the nonradiative relaxation to the first excited state 4I13/2 (0.81 eV) occurs. And finally the 1.534 µm radiative emission into ground state 4I15/2 occurs.",
keywords = "band structure, electroluminescence, electrons, erbium, heterostructure, holes, indium oxide, silicon, thin films, кремний, оксид индия, эрбий, тонкие пленки, гетероструктура, зонная структура, электроны, дырки, электролюминесценция",
author = "Feklistov, {Konstantin V.} and Lemzyakov, {Aleksey G.} and Abramkin, {Demid S.} and Svit, {Kirill A.} and Pugachev, {Alexey M.} and Volodin, {Vladimir A.} and Marin, {Denis V.} and Spesivsev, {Evgeny V.} and Azarov, {Ivan A.} and Safronov, {Leonid N.} and Kochubey, {Sergey A.} and Ershov, {Kirill S.} and Kapishnikov, {Aleksandr V.} and Shmakov, {Alexander N.} and Shklyaev, {Alexander A.} and Zhivodkov, {Yuriy A.}",
note = "Feklistov KV, Lemzyakov AG, Abramkin DS, Svit KA, Pugachev AM, Volodin VA, Marin DV, Spesivsev EV, Azarov IA, Safronov LN, Kochubey SA, Ershov KS, Kapishnikov AV, Shmakov AN, Shklyaev AA, Zhivodkov YuA (2026) 1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate. Modern Electronic Materials 12(2): 95–102. https://doi.org/10.3897/j.moem.12.2.205390 The research was supported by FSI (grant No. 4235GS1/70543 from 27.10.2021) and partly by the Ministry of Education and Science of the Russian Federation. V.A.V., M.D.V. and K.A.V. (NSU) acknowledge the financial support from the Ministry of Education and Science of the Russian Federation by the grant: FSUS2024-0020., S.A.A. (ISP SB RAS): FWGW-2025-0011, E.K.S. (ICKC SB RAS): FWGF-2026-0011, P.A.M. (IA&E SB RAS): FWNG-2024-0023, S.A.N (BIC SB RAS): FWUR-2024-0042. The XRD measurements were performed on the equipment of the Shared research center ATICKP NSU and CKP “SKIF”. Оptical measurements were realized on the equipment of CKP “High resolution spectroscopy of gases and condensed media” IA&E SB RAS. The film sputtering was performed at the shared research center SSTRC on the basis of the VEPP-4 – VEPP2000 complex at BINP SB RAS. The sputtering target was manufactured by Phildal Holding Co., Ltd., China. The authors acknowledge E.D. Zanaev and N.V. Dudchenko for their chemical and thermal treatments.",
year = "2026",
month = jun,
day = "30",
doi = "10.3897/j.moem.12.2.205390",
language = "English",
volume = "12",
pages = "95--102",
journal = "Modern Electronic Materials",
issn = "2452-2449",
publisher = "Pensoft Publishers",
number = "2",

}

RIS

TY - JOUR

T1 - 1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate

AU - Feklistov, Konstantin V.

AU - Lemzyakov, Aleksey G.

AU - Abramkin, Demid S.

AU - Svit, Kirill A.

AU - Pugachev, Alexey M.

AU - Volodin, Vladimir A.

AU - Marin, Denis V.

AU - Spesivsev, Evgeny V.

AU - Azarov, Ivan A.

AU - Safronov, Leonid N.

AU - Kochubey, Sergey A.

AU - Ershov, Kirill S.

AU - Kapishnikov, Aleksandr V.

AU - Shmakov, Alexander N.

AU - Shklyaev, Alexander A.

AU - Zhivodkov, Yuriy A.

N1 - Feklistov KV, Lemzyakov AG, Abramkin DS, Svit KA, Pugachev AM, Volodin VA, Marin DV, Spesivsev EV, Azarov IA, Safronov LN, Kochubey SA, Ershov KS, Kapishnikov AV, Shmakov AN, Shklyaev AA, Zhivodkov YuA (2026) 1.534 µm Er electroluminescence in the RF magnetron deposited In2O3 : Er films on a Si substrate. Modern Electronic Materials 12(2): 95–102. https://doi.org/10.3897/j.moem.12.2.205390 The research was supported by FSI (grant No. 4235GS1/70543 from 27.10.2021) and partly by the Ministry of Education and Science of the Russian Federation. V.A.V., M.D.V. and K.A.V. (NSU) acknowledge the financial support from the Ministry of Education and Science of the Russian Federation by the grant: FSUS2024-0020., S.A.A. (ISP SB RAS): FWGW-2025-0011, E.K.S. (ICKC SB RAS): FWGF-2026-0011, P.A.M. (IA&E SB RAS): FWNG-2024-0023, S.A.N (BIC SB RAS): FWUR-2024-0042. The XRD measurements were performed on the equipment of the Shared research center ATICKP NSU and CKP “SKIF”. Оptical measurements were realized on the equipment of CKP “High resolution spectroscopy of gases and condensed media” IA&E SB RAS. The film sputtering was performed at the shared research center SSTRC on the basis of the VEPP-4 – VEPP2000 complex at BINP SB RAS. The sputtering target was manufactured by Phildal Holding Co., Ltd., China. The authors acknowledge E.D. Zanaev and N.V. Dudchenko for their chemical and thermal treatments.

PY - 2026/6/30

Y1 - 2026/6/30

N2 - In2O3 : Er films were synthesized on silicon substrates by the RF magnetron sputter deposition. The solid solution ((In1-xErx)2O3) is formed here. The 1.534 µm erbium electroluminescence is observed by the current through the investigated heterostructure substrate-n-Si\In2O3 : Er-film\ITO-contact. The Er excitation model by the electron-hole recombination is proposed as follow. The electron current flows at the indium oxide conduction band. And the hole current flows at the channel in the middle of the In2O3 : Er bandgap. The hole channel is formed by the defect state density spreading from the valence band edge into the bandgap. Therefore the electron-hole recombination energy is lower than the indium oxide bandgap and equals to the 1.56 eV. Then the electron-hole recombination excites in resonance the third excited state of Er3+ 4I9/2 (1.53 eV). Then the nonradiative relaxation to the first excited state 4I13/2 (0.81 eV) occurs. And finally the 1.534 µm radiative emission into ground state 4I15/2 occurs.

AB - In2O3 : Er films were synthesized on silicon substrates by the RF magnetron sputter deposition. The solid solution ((In1-xErx)2O3) is formed here. The 1.534 µm erbium electroluminescence is observed by the current through the investigated heterostructure substrate-n-Si\In2O3 : Er-film\ITO-contact. The Er excitation model by the electron-hole recombination is proposed as follow. The electron current flows at the indium oxide conduction band. And the hole current flows at the channel in the middle of the In2O3 : Er bandgap. The hole channel is formed by the defect state density spreading from the valence band edge into the bandgap. Therefore the electron-hole recombination energy is lower than the indium oxide bandgap and equals to the 1.56 eV. Then the electron-hole recombination excites in resonance the third excited state of Er3+ 4I9/2 (1.53 eV). Then the nonradiative relaxation to the first excited state 4I13/2 (0.81 eV) occurs. And finally the 1.534 µm radiative emission into ground state 4I15/2 occurs.

KW - band structure

KW - electroluminescence

KW - electrons

KW - erbium

KW - heterostructure

KW - holes

KW - indium oxide

KW - silicon

KW - thin films

KW - кремний

KW - оксид индия

KW - эрбий

KW - тонкие пленки

KW - гетероструктура

KW - зонная структура

KW - электроны

KW - дырки

KW - электролюминесценция

UR - https://www.mendeley.com/catalogue/dc6d2a2c-a1d8-3511-85b2-03c4a6b5c0e6/

UR - https://www.scopus.com/pages/publications/105044280549

U2 - 10.3897/j.moem.12.2.205390

DO - 10.3897/j.moem.12.2.205390

M3 - Article

VL - 12

SP - 95

EP - 102

JO - Modern Electronic Materials

JF - Modern Electronic Materials

SN - 2452-2449

IS - 2

ER -

ID: 83198580