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Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation. / Fedina, L. I.; Gutakovskii, A. K.; Latyshev, Alexander V. et al.
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. ed. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Publishing Company, Inc., 2017. p. 383-407 (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).
Research output: Chapter in Book/Report/Conference proceeding › Chapter › Research › peer-review
Harvard
Fedina, LI, Gutakovskii, AK
, Latyshev, AV & Aseev, AL 2017,
Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation. in AV Latyshev, AV Dvurechenskii & AL Aseev (eds),
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, Elsevier Science Publishing Company, Inc., pp. 383-407.
https://doi.org/10.1016/B978-0-12-810512-2.00016-0APA
Fedina, L. I., Gutakovskii, A. K.
, Latyshev, A. V., & Aseev, A. L. (2017).
Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation. In AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Eds.),
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications (pp. 383-407). (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications). Elsevier Science Publishing Company, Inc..
https://doi.org/10.1016/B978-0-12-810512-2.00016-0Vancouver
Fedina LI, Gutakovskii AK
, Latyshev AV, Aseev AL.
Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation. In Latyshev AV, Dvurechenskii AV, Aseev AL, editors, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc. 2017. p. 383-407. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications). doi: 10.1016/B978-0-12-810512-2.00016-0
Author
Fedina, L. I. ; Gutakovskii, A. K.
; Latyshev, Alexander V. et al. /
Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. editor / AV Latyshev ; AV Dvurechenskii ; AL Aseev. Elsevier Science Publishing Company, Inc., 2017. pp. 383-407 (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).
BibTeX
@inbook{6ada416b78b44a978328ca34befc1fc2,
title = "Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation",
abstract = "This chapter presents results illuminating one of the long-standing problems in silicon related to the prevailing formation about extended defects in (113) planes on various process exposures. Based on in situ and ex situ high-resolution electron microscopy, supported with extensive defect structure modeling and image simulations, we demonstrate that mixed aggregation of vacancies (Vs) and self-interstitials (Is) takes place in the (113) plane to form close correlated I-V pairs or V2-2I clusters and even amorphous-like phases depending on irradiation conditions. The fact that multiple defect pairs are ordered in strict sequence along nearest neighboring atomic chains in the (332) direction constituting the (113) plane predetermines the subsequent formation of a universal set of topological-bond defects, comprising low-energy (0.7-1eV/atom) fivefold and eightfold atomic rings (5-8), and, thus, the universality of the (113) plane for mixed point defect aggregation. The ordered 5-8 array where all atoms are fully coordinated provides for defect recombination, or incorporation of excessive Is, to build up the 5-6h-7-8 topological structure known as the (113) interstitial-type of defect. Such a complex mechanism of point defect aggregation in Si is caused by a low symmetry of primary point defects, and results in a decreased crystal energy for any mixed clustering of defects in the (113) plane within a temperature range of T<0.5 melting.",
keywords = "113 defects, In situ HRTEM irradiation experiments, Self-interstitial atoms, Self-ordering, Topological-bond defects, Vacancies, INTRINSIC POINT-DEFECTS, MOLECULAR-DYNAMICS, SILICON, EXTENDED DEFECTS, TIGHT-BINDING, FZ-SI, ELECTRON-IRRADIATION, ION-IMPLANTATION, HREM IRRADIATION, DIFFUSION",
author = "Fedina, {L. I.} and Gutakovskii, {A. K.} and Latyshev, {Alexander V.} and Aseev, {Alexander L.}",
note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Inc. All rights reserved.",
year = "2017",
month = jan,
day = "1",
doi = "10.1016/B978-0-12-810512-2.00016-0",
language = "English",
isbn = "9780128105139",
series = "Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications",
publisher = "Elsevier Science Publishing Company, Inc.",
pages = "383--407",
editor = "AV Latyshev and AV Dvurechenskii and AL Aseev",
booktitle = "Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications",
address = "Netherlands",
}
RIS
TY - CHAP
T1 - Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation
AU - Fedina, L. I.
AU - Gutakovskii, A. K.
AU - Latyshev, Alexander V.
AU - Aseev, Alexander L.
N1 - Publisher Copyright:
© 2017 Elsevier Inc. All rights reserved.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - This chapter presents results illuminating one of the long-standing problems in silicon related to the prevailing formation about extended defects in (113) planes on various process exposures. Based on in situ and ex situ high-resolution electron microscopy, supported with extensive defect structure modeling and image simulations, we demonstrate that mixed aggregation of vacancies (Vs) and self-interstitials (Is) takes place in the (113) plane to form close correlated I-V pairs or V2-2I clusters and even amorphous-like phases depending on irradiation conditions. The fact that multiple defect pairs are ordered in strict sequence along nearest neighboring atomic chains in the (332) direction constituting the (113) plane predetermines the subsequent formation of a universal set of topological-bond defects, comprising low-energy (0.7-1eV/atom) fivefold and eightfold atomic rings (5-8), and, thus, the universality of the (113) plane for mixed point defect aggregation. The ordered 5-8 array where all atoms are fully coordinated provides for defect recombination, or incorporation of excessive Is, to build up the 5-6h-7-8 topological structure known as the (113) interstitial-type of defect. Such a complex mechanism of point defect aggregation in Si is caused by a low symmetry of primary point defects, and results in a decreased crystal energy for any mixed clustering of defects in the (113) plane within a temperature range of T<0.5 melting.
AB - This chapter presents results illuminating one of the long-standing problems in silicon related to the prevailing formation about extended defects in (113) planes on various process exposures. Based on in situ and ex situ high-resolution electron microscopy, supported with extensive defect structure modeling and image simulations, we demonstrate that mixed aggregation of vacancies (Vs) and self-interstitials (Is) takes place in the (113) plane to form close correlated I-V pairs or V2-2I clusters and even amorphous-like phases depending on irradiation conditions. The fact that multiple defect pairs are ordered in strict sequence along nearest neighboring atomic chains in the (332) direction constituting the (113) plane predetermines the subsequent formation of a universal set of topological-bond defects, comprising low-energy (0.7-1eV/atom) fivefold and eightfold atomic rings (5-8), and, thus, the universality of the (113) plane for mixed point defect aggregation. The ordered 5-8 array where all atoms are fully coordinated provides for defect recombination, or incorporation of excessive Is, to build up the 5-6h-7-8 topological structure known as the (113) interstitial-type of defect. Such a complex mechanism of point defect aggregation in Si is caused by a low symmetry of primary point defects, and results in a decreased crystal energy for any mixed clustering of defects in the (113) plane within a temperature range of T<0.5 melting.
KW - 113 defects
KW - In situ HRTEM irradiation experiments
KW - Self-interstitial atoms
KW - Self-ordering
KW - Topological-bond defects
KW - Vacancies
KW - INTRINSIC POINT-DEFECTS
KW - MOLECULAR-DYNAMICS
KW - SILICON
KW - EXTENDED DEFECTS
KW - TIGHT-BINDING
KW - FZ-SI
KW - ELECTRON-IRRADIATION
KW - ION-IMPLANTATION
KW - HREM IRRADIATION
KW - DIFFUSION
UR - http://www.scopus.com/inward/record.url?scp=85021731904&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/45fed3d2-d313-3253-8fca-e3733fd49931/
U2 - 10.1016/B978-0-12-810512-2.00016-0
DO - 10.1016/B978-0-12-810512-2.00016-0
M3 - Chapter
SN - 9780128105139
T3 - Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications
SP - 383
EP - 407
BT - Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications
A2 - Latyshev, AV
A2 - Dvurechenskii, AV
A2 - Aseev, AL
PB - Elsevier Science Publishing Company, Inc.
ER -
