TY - CHAP

T1 - Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

AU - Fedina, L. I.

AU - Gutakovskii, A. K.

AU - Latyshev, Alexander V.

AU - Aseev, Alexander L.

N1 - Publisher Copyright: © 2017 Elsevier Inc. All rights reserved.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - This chapter presents results illuminating one of the long-standing problems in silicon related to the prevailing formation about extended defects in (113) planes on various process exposures. Based on in situ and ex situ high-resolution electron microscopy, supported with extensive defect structure modeling and image simulations, we demonstrate that mixed aggregation of vacancies (Vs) and self-interstitials (Is) takes place in the (113) plane to form close correlated I-V pairs or V2-2I clusters and even amorphous-like phases depending on irradiation conditions. The fact that multiple defect pairs are ordered in strict sequence along nearest neighboring atomic chains in the (332) direction constituting the (113) plane predetermines the subsequent formation of a universal set of topological-bond defects, comprising low-energy (0.7-1eV/atom) fivefold and eightfold atomic rings (5-8), and, thus, the universality of the (113) plane for mixed point defect aggregation. The ordered 5-8 array where all atoms are fully coordinated provides for defect recombination, or incorporation of excessive Is, to build up the 5-6h-7-8 topological structure known as the (113) interstitial-type of defect. Such a complex mechanism of point defect aggregation in Si is caused by a low symmetry of primary point defects, and results in a decreased crystal energy for any mixed clustering of defects in the (113) plane within a temperature range of T<0.5 melting.

AB - This chapter presents results illuminating one of the long-standing problems in silicon related to the prevailing formation about extended defects in (113) planes on various process exposures. Based on in situ and ex situ high-resolution electron microscopy, supported with extensive defect structure modeling and image simulations, we demonstrate that mixed aggregation of vacancies (Vs) and self-interstitials (Is) takes place in the (113) plane to form close correlated I-V pairs or V2-2I clusters and even amorphous-like phases depending on irradiation conditions. The fact that multiple defect pairs are ordered in strict sequence along nearest neighboring atomic chains in the (332) direction constituting the (113) plane predetermines the subsequent formation of a universal set of topological-bond defects, comprising low-energy (0.7-1eV/atom) fivefold and eightfold atomic rings (5-8), and, thus, the universality of the (113) plane for mixed point defect aggregation. The ordered 5-8 array where all atoms are fully coordinated provides for defect recombination, or incorporation of excessive Is, to build up the 5-6h-7-8 topological structure known as the (113) interstitial-type of defect. Such a complex mechanism of point defect aggregation in Si is caused by a low symmetry of primary point defects, and results in a decreased crystal energy for any mixed clustering of defects in the (113) plane within a temperature range of T<0.5 melting.

KW - 113 defects

KW - In situ HRTEM irradiation experiments

KW - Self-interstitial atoms

KW - Self-ordering

KW - Topological-bond defects

KW - Vacancies

KW - INTRINSIC POINT-DEFECTS

KW - MOLECULAR-DYNAMICS

KW - SILICON

KW - EXTENDED DEFECTS

KW - TIGHT-BINDING

KW - FZ-SI

KW - ELECTRON-IRRADIATION

KW - ION-IMPLANTATION

KW - HREM IRRADIATION

KW - DIFFUSION

UR - http://www.scopus.com/inward/record.url?scp=85021731904&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-810512-2.00016-0

DO - 10.1016/B978-0-12-810512-2.00016-0

M3 - Chapter

SN - 9780128105122

SP - 383

EP - 407

BT - Advances in Semiconductor Nanostructures

A2 - Latyshev, AV

A2 - Dvurechenskii, AV

A2 - Aseev, AL

PB - Elsevier Science Inc.

ER -