Transparent silicon carbide/tunnel SiO2 passivation for c-Si solar cell front side: Enabling Jsc > 42 mA/cm2 and iVoc of 742 mV › Research Explorer

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Transparent silicon carbide/tunnel SiO₂ passivation for c-Si solar cell front side: Enabling J_sc > 42 mA/cm² and iV_oc of 742 mV

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1002/pip.3244
Final published version

Manuel Pomaska
Malte Köhler
Paul Procel Moya
Alexandr Zamchiy
Aryak Singh
Do Yun Kim
Olindo Isabella
Miro Zeman
Shenghao Li
Kaifu Qiu
Alexander Eberst
Vladimir Smirnov
Friedhelm Finger
Uwe Rau
Kaining Ding

Original language	English
Pages (from-to)	321-327
Number of pages	7
Journal	Progress in Photovoltaics: Research and Applications
Volume	28
Issue number	4
DOIs	https://doi.org/10.1002/pip.3244
Publication status	Published - 1 Apr 2020

OECD FOS+WOS

Research areas

antireflecting coating, excellent passivation, heterojunction, hot wire CVD, lean process, refractive index, silicon carbide, tunnel oxide, CONTACT

ID: 23209662