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Transformation of the InP(001) surface upon annealing in an arsenic flux. / Dmitriev, Dmitriy V.; Kolosovsky, Danil A.; Gavrilova, Tatyana A. et al.
In: Surface Science, Vol. 710, 121861, 08.2021.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Transformation of the InP(001) surface upon annealing in an arsenic flux
AU - Dmitriev, Dmitriy V.
AU - Kolosovsky, Danil A.
AU - Gavrilova, Tatyana A.
AU - Gutakovskii, Anton K.
AU - Toropov, Alexander I.
AU - Zhuravlev, Konstantin S.
N1 - Funding Information: For SEM and HTREM investigations were using the equipment of CCU ISP SBRAS “Nanostructures”. The research was funded by RFBR and Novosibirsk region, project number 20-42-540009. Publisher Copyright: © 2021 Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2021/8
Y1 - 2021/8
N2 - We report experimental study of the transformation of the oxide-coated InP(001) surface during annealing in an arsenic flux. Using the RHEED method, it was shown that an InP1-хAsх layer is formed on the surface. The transformation of an oxidized surface occurs at a temperature higher at about 60°C than the transformation of an atomically clean surface. The activation energy Ea = 1.17 eV of the formation of an arsenic-containing layer was determined. The amount of arsenic substitution for phosphorus at different annealing temperatures was determined, which is 7% at an annealing temperature of 480°C and increases to 41% with an increase in the annealing temperature to 540°C. SEM analysis of surface reveals areas with high arsenic content (InAs islands). The size and density of such regions increases with an increase in the annealing temperature and at 540°C reaches 5.5 × 103 nm2 and 6 × 109 cm−2, respectively. However, despite the local inhomogeneities, the main surface area is covered with a uniform InPAs layer. The area covered with InAs islands occupies about 1.5% of the surface area at an annealing temperature of 540°C.
AB - We report experimental study of the transformation of the oxide-coated InP(001) surface during annealing in an arsenic flux. Using the RHEED method, it was shown that an InP1-хAsх layer is formed on the surface. The transformation of an oxidized surface occurs at a temperature higher at about 60°C than the transformation of an atomically clean surface. The activation energy Ea = 1.17 eV of the formation of an arsenic-containing layer was determined. The amount of arsenic substitution for phosphorus at different annealing temperatures was determined, which is 7% at an annealing temperature of 480°C and increases to 41% with an increase in the annealing temperature to 540°C. SEM analysis of surface reveals areas with high arsenic content (InAs islands). The size and density of such regions increases with an increase in the annealing temperature and at 540°C reaches 5.5 × 103 nm2 and 6 × 109 cm−2, respectively. However, despite the local inhomogeneities, the main surface area is covered with a uniform InPAs layer. The area covered with InAs islands occupies about 1.5% of the surface area at an annealing temperature of 540°C.
KW - annealing
KW - As/P exchange
KW - InP
KW - MBE
KW - RHEED
KW - surface
UR - http://www.scopus.com/inward/record.url?scp=85104668674&partnerID=8YFLogxK
U2 - 10.1016/j.susc.2021.121861
DO - 10.1016/j.susc.2021.121861
M3 - Article
AN - SCOPUS:85104668674
VL - 710
JO - Surface Science
JF - Surface Science
SN - 0039-6028
M1 - 121861
ER -
ID: 28505753