TY - JOUR

T1 - Transformation of the InP(001) surface upon annealing in an arsenic flux

AU - Dmitriev, Dmitriy V.

AU - Kolosovsky, Danil A.

AU - Gavrilova, Tatyana A.

AU - Gutakovskii, Anton K.

AU - Toropov, Alexander I.

AU - Zhuravlev, Konstantin S.

N1 - Funding Information: For SEM and HTREM investigations were using the equipment of CCU ISP SBRAS “Nanostructures”. The research was funded by RFBR and Novosibirsk region, project number 20-42-540009. Publisher Copyright: © 2021 Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/8

Y1 - 2021/8

N2 - We report experimental study of the transformation of the oxide-coated InP(001) surface during annealing in an arsenic flux. Using the RHEED method, it was shown that an InP1-хAsх layer is formed on the surface. The transformation of an oxidized surface occurs at a temperature higher at about 60°C than the transformation of an atomically clean surface. The activation energy Ea = 1.17 eV of the formation of an arsenic-containing layer was determined. The amount of arsenic substitution for phosphorus at different annealing temperatures was determined, which is 7% at an annealing temperature of 480°C and increases to 41% with an increase in the annealing temperature to 540°C. SEM analysis of surface reveals areas with high arsenic content (InAs islands). The size and density of such regions increases with an increase in the annealing temperature and at 540°C reaches 5.5 × 103 nm2 and 6 × 109 cm−2, respectively. However, despite the local inhomogeneities, the main surface area is covered with a uniform InPAs layer. The area covered with InAs islands occupies about 1.5% of the surface area at an annealing temperature of 540°C.

AB - We report experimental study of the transformation of the oxide-coated InP(001) surface during annealing in an arsenic flux. Using the RHEED method, it was shown that an InP1-хAsх layer is formed on the surface. The transformation of an oxidized surface occurs at a temperature higher at about 60°C than the transformation of an atomically clean surface. The activation energy Ea = 1.17 eV of the formation of an arsenic-containing layer was determined. The amount of arsenic substitution for phosphorus at different annealing temperatures was determined, which is 7% at an annealing temperature of 480°C and increases to 41% with an increase in the annealing temperature to 540°C. SEM analysis of surface reveals areas with high arsenic content (InAs islands). The size and density of such regions increases with an increase in the annealing temperature and at 540°C reaches 5.5 × 103 nm2 and 6 × 109 cm−2, respectively. However, despite the local inhomogeneities, the main surface area is covered with a uniform InPAs layer. The area covered with InAs islands occupies about 1.5% of the surface area at an annealing temperature of 540°C.

KW - annealing

KW - As/P exchange

KW - InP

KW - MBE

KW - RHEED

KW - surface

UR - http://www.scopus.com/inward/record.url?scp=85104668674&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2021.121861

DO - 10.1016/j.susc.2021.121861

M3 - Article

AN - SCOPUS:85104668674

VL - 710

JO - Surface Science

JF - Surface Science

SN - 0039-6028

M1 - 121861

ER -