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The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes. / Chistokhin, I. B.; Aksenov, M. S.; Valisheva, N. A. et al.

In: Technical Physics Letters, Vol. 45, No. 2, 01.02.2019, p. 180-184.

Research output: Contribution to journal › Article › peer-review

Harvard

Chistokhin, IB, Aksenov, MS, Valisheva, NA, Dmitriev, DV, Marchishin, IV, Toropov, AI & Zhuravlev, KS 2019, 'The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes', Technical Physics Letters, vol. 45, no. 2, pp. 180-184. https://doi.org/10.1134/S106378501902024X

APA

Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Marchishin, I. V., Toropov, A. I., & Zhuravlev, K. S. (2019). The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes. Technical Physics Letters, 45(2), 180-184. https://doi.org/10.1134/S106378501902024X

Vancouver

Chistokhin IB, Aksenov MS, Valisheva NA, Dmitriev DV, Marchishin IV, Toropov AI et al. The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes. Technical Physics Letters. 2019 Feb 1;45(2):180-184. doi: 10.1134/S106378501902024X

Author

Chistokhin, I. B. ; Aksenov, M. S. ; Valisheva, N. A. et al. / The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes. In: Technical Physics Letters. 2019 ; Vol. 45, No. 2. pp. 180-184.

BibTeX

@article{190a9577bd954bf9816cd54c6449257e,
title = "The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes",
abstract = "Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 7 cm –2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K. ",
author = "Chistokhin, {I. B.} and Aksenov, {M. S.} and Valisheva, {N. A.} and Dmitriev, {D. V.} and Marchishin, {I. V.} and Toropov, {A. I.} and Zhuravlev, {K. S.}",
year = "2019",
month = feb,
day = "1",
doi = "10.1134/S106378501902024X",
language = "English",
volume = "45",
pages = "180--184",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

AU - Chistokhin, I. B.

AU - Aksenov, M. S.

AU - Valisheva, N. A.

AU - Dmitriev, D. V.

AU - Marchishin, I. V.

AU - Toropov, A. I.

AU - Zhuravlev, K. S.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 7 cm –2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

AB - Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 7 cm –2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

UR - http://www.scopus.com/inward/record.url?scp=85065409926&partnerID=8YFLogxK

U2 - 10.1134/S106378501902024X

DO - 10.1134/S106378501902024X

M3 - Article

AN - SCOPUS:85065409926

VL - 45

SP - 180

EP - 184

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 2

ER -

ID: 20038342