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The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes. / Chistokhin, I. B.; Aksenov, M. S.; Valisheva, N. A. и др.

в: Technical Physics Letters, Том 45, № 2, 01.02.2019, стр. 180-184.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Chistokhin, IB, Aksenov, MS, Valisheva, NA, Dmitriev, DV, Marchishin, IV, Toropov, AI & Zhuravlev, KS 2019, 'The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes', Technical Physics Letters, Том. 45, № 2, стр. 180-184. https://doi.org/10.1134/S106378501902024X

APA

Chistokhin, I. B., Aksenov, M. S., Valisheva, N. A., Dmitriev, D. V., Marchishin, I. V., Toropov, A. I., & Zhuravlev, K. S. (2019). The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes. Technical Physics Letters, 45(2), 180-184. https://doi.org/10.1134/S106378501902024X

Vancouver

Chistokhin IB, Aksenov MS, Valisheva NA, Dmitriev DV, Marchishin IV, Toropov AI и др. The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes. Technical Physics Letters. 2019 февр. 1;45(2):180-184. doi: 10.1134/S106378501902024X

Author

Chistokhin, I. B. ; Aksenov, M. S. ; Valisheva, N. A. и др. / The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes. в: Technical Physics Letters. 2019 ; Том 45, № 2. стр. 180-184.

BibTeX

@article{190a9577bd954bf9816cd54c6449257e,
title = "The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes",
abstract = "Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 7 cm –2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K. ",
author = "Chistokhin, {I. B.} and Aksenov, {M. S.} and Valisheva, {N. A.} and Dmitriev, {D. V.} and Marchishin, {I. V.} and Toropov, {A. I.} and Zhuravlev, {K. S.}",
year = "2019",
month = feb,
day = "1",
doi = "10.1134/S106378501902024X",
language = "English",
volume = "45",
pages = "180--184",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes

AU - Chistokhin, I. B.

AU - Aksenov, M. S.

AU - Valisheva, N. A.

AU - Dmitriev, D. V.

AU - Marchishin, I. V.

AU - Toropov, A. I.

AU - Zhuravlev, K. S.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 7 cm –2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

AB - Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10 7 cm –2 , these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

UR - http://www.scopus.com/inward/record.url?scp=85065409926&partnerID=8YFLogxK

U2 - 10.1134/S106378501902024X

DO - 10.1134/S106378501902024X

M3 - Article

AN - SCOPUS:85065409926

VL - 45

SP - 180

EP - 184

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 2

ER -

ID: 20038342