Research output: Contribution to journal › Article › peer-review
The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures. / Sonmez, F.; Ardali, S.; Lisesivdin, S. B. et al.
In: Journal of Physics Condensed Matter, Vol. 33, No. 25, 255501, 06.2021.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - The effect of barrier layers on 2D electron effective mass in Al0.3Ga0.7N/AlN/GaN heterostructures
AU - Sonmez, F.
AU - Ardali, S.
AU - Lisesivdin, S. B.
AU - Malin, T.
AU - Mansurov, V.
AU - Zhuravlev, K.
AU - Tiras, E.
N1 - Funding Information: This work was supported in part by Ministry of Science and Higher Education of the Russian Federation (Grant Nos. 075-15-2020-797(13.1902.21.0024)) and TUBITAK (113F364). SBL was supported in part by the Distinguished Young Scientist Award of the Turkish Academy of Sciences (TUBAGEBIP 2016). Publisher Copyright: © 2021 IOP Publishing Ltd
PY - 2021/6
Y1 - 2021/6
N2 - The Shubnikov de Haas (SdH) effect measurements have been performed to evaluate the influence of Si3N4 passivation, a spacer layer, and Si-doped barrier layer on the electronic transport parameters of two-dimensional (2D) electrons in Al0.3Ga0.7N/AlN/GaN heterostructures under temperatures from 1.8 K to 40 K and at a magnetic field up to 11 T. The 2D electron effective mass (m∗), 2D carrier density (N2D), the difference between Fermi level and subband energy levels (EF − E1), quantum lifetime (τq) are determined by analyzing SdH oscillations. Although investigated samples with equal 2D electron density are examined, the effective mass values of 2D electrons are deduced within the range of (0.16 ± 0.005)m0 and (0.23 ± 0.005)m0. Results reveal that passivation, a spacer layer, and doping affect 2D electron effective mass. Furthermore, the dominant scattering mechanisms that limited electron transport is determined as a long-range scattering for all investigated sample. The results obtained provide information for the high-performance device application of these samples.
AB - The Shubnikov de Haas (SdH) effect measurements have been performed to evaluate the influence of Si3N4 passivation, a spacer layer, and Si-doped barrier layer on the electronic transport parameters of two-dimensional (2D) electrons in Al0.3Ga0.7N/AlN/GaN heterostructures under temperatures from 1.8 K to 40 K and at a magnetic field up to 11 T. The 2D electron effective mass (m∗), 2D carrier density (N2D), the difference between Fermi level and subband energy levels (EF − E1), quantum lifetime (τq) are determined by analyzing SdH oscillations. Although investigated samples with equal 2D electron density are examined, the effective mass values of 2D electrons are deduced within the range of (0.16 ± 0.005)m0 and (0.23 ± 0.005)m0. Results reveal that passivation, a spacer layer, and doping affect 2D electron effective mass. Furthermore, the dominant scattering mechanisms that limited electron transport is determined as a long-range scattering for all investigated sample. The results obtained provide information for the high-performance device application of these samples.
KW - AlGaN/GaN heterostructures
KW - Electron effective mass
KW - Passivation layer
KW - Shubnikov de Haas oscillation
UR - http://www.scopus.com/inward/record.url?scp=85106667009&partnerID=8YFLogxK
U2 - 10.1088/1361-648X/abf8d2
DO - 10.1088/1361-648X/abf8d2
M3 - Article
C2 - 33862599
AN - SCOPUS:85106667009
VL - 33
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
SN - 0953-8984
IS - 25
M1 - 255501
ER -
ID: 34033600