Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs(013) and Si(013) substrates

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	095007
Number of pages	9
Journal	Semiconductor Science and Technology
Volume	32
Issue number	9
DOIs	https://doi.org/10.1088/1361-6641/aa76a0
Publication status	Published - 16 Aug 2017

annealing, double acceptors, Fourier transform infrared spectroscopy, HgCdTe, Luttinger-Kohn model, STATES, CYCLOTRON-RESONANCE, DEEP LEVELS, HG1-XCDXTE, HETEROSTRUCTURES, ELECTRICAL-PROPERTIES, IMPURITY, HGTE QUANTUM-WELLS, SPECTROSCOPY, SPECTRA

ID: 9915519