Standard

Surface potential response from GaP nanowires synthesized with mixed crystal phases. / Kyeyune, B.; Soboleva, E.; Geydt, P. et al.

In: Journal of Physics: Conference Series, Vol. 1400, No. 4, 044018, 11.12.2019.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Kyeyune, B, Soboleva, E, Geydt, P, Khayrudinov, V, Alekseev, P, Lipsanen, H & Lähderanta, E 2019, 'Surface potential response from GaP nanowires synthesized with mixed crystal phases', Journal of Physics: Conference Series, vol. 1400, no. 4, 044018. https://doi.org/10.1088/1742-6596/1400/4/044018

APA

Kyeyune, B., Soboleva, E., Geydt, P., Khayrudinov, V., Alekseev, P., Lipsanen, H., & Lähderanta, E. (2019). Surface potential response from GaP nanowires synthesized with mixed crystal phases. Journal of Physics: Conference Series, 1400(4), [044018]. https://doi.org/10.1088/1742-6596/1400/4/044018

Vancouver

Kyeyune B, Soboleva E, Geydt P, Khayrudinov V, Alekseev P, Lipsanen H et al. Surface potential response from GaP nanowires synthesized with mixed crystal phases. Journal of Physics: Conference Series. 2019 Dec 11;1400(4):044018. doi: 10.1088/1742-6596/1400/4/044018

Author

Kyeyune, B. ; Soboleva, E. ; Geydt, P. et al. / Surface potential response from GaP nanowires synthesized with mixed crystal phases. In: Journal of Physics: Conference Series. 2019 ; Vol. 1400, No. 4.

BibTeX

@article{8705380d31624488b0bedc8c61812fe5,
title = "Surface potential response from GaP nanowires synthesized with mixed crystal phases",
abstract = "In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.",
keywords = "Atomic Force Microscopy (AFM), Nanowires (NWs), Kelvin Probe Force Microscopy (KPFM), Wurzite (WZ), Zincblende (ZB), Gallium phosphide (GaP), WURTZITE",
author = "B. Kyeyune and E. Soboleva and P. Geydt and V. Khayrudinov and P. Alekseev and H. Lipsanen and E. L{\"a}hderanta",
year = "2019",
month = dec,
day = "11",
doi = "10.1088/1742-6596/1400/4/044018",
language = "English",
volume = "1400",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "4",
note = "International Conference PhysicA.SPb 2019 ; Conference date: 22-10-2019 Through 24-10-2019",

}

RIS

TY - JOUR

T1 - Surface potential response from GaP nanowires synthesized with mixed crystal phases

AU - Kyeyune, B.

AU - Soboleva, E.

AU - Geydt, P.

AU - Khayrudinov, V.

AU - Alekseev, P.

AU - Lipsanen, H.

AU - Lähderanta, E.

PY - 2019/12/11

Y1 - 2019/12/11

N2 - In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.

AB - In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.

KW - Atomic Force Microscopy (AFM)

KW - Nanowires (NWs)

KW - Kelvin Probe Force Microscopy (KPFM)

KW - Wurzite (WZ)

KW - Zincblende (ZB)

KW - Gallium phosphide (GaP)

KW - WURTZITE

UR - http://www.scopus.com/inward/record.url?scp=85077590690&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1400/4/044018

DO - 10.1088/1742-6596/1400/4/044018

M3 - Conference article

AN - SCOPUS:85077590690

VL - 1400

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 4

M1 - 044018

T2 - International Conference PhysicA.SPb 2019

Y2 - 22 October 2019 through 24 October 2019

ER -

ID: 23569258