Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование
Surface potential response from GaP nanowires synthesized with mixed crystal phases. / Kyeyune, B.; Soboleva, E.; Geydt, P. и др.
в: Journal of Physics: Conference Series, Том 1400, № 4, 044018, 11.12.2019.Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование
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TY - JOUR
T1 - Surface potential response from GaP nanowires synthesized with mixed crystal phases
AU - Kyeyune, B.
AU - Soboleva, E.
AU - Geydt, P.
AU - Khayrudinov, V.
AU - Alekseev, P.
AU - Lipsanen, H.
AU - Lähderanta, E.
PY - 2019/12/11
Y1 - 2019/12/11
N2 - In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.
AB - In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.
KW - Atomic Force Microscopy (AFM)
KW - Nanowires (NWs)
KW - Kelvin Probe Force Microscopy (KPFM)
KW - Wurzite (WZ)
KW - Zincblende (ZB)
KW - Gallium phosphide (GaP)
KW - WURTZITE
UR - http://www.scopus.com/inward/record.url?scp=85077590690&partnerID=8YFLogxK
U2 - 10.1088/1742-6596/1400/4/044018
DO - 10.1088/1742-6596/1400/4/044018
M3 - Conference article
AN - SCOPUS:85077590690
VL - 1400
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 4
M1 - 044018
T2 - International Conference PhysicA.SPb 2019
Y2 - 22 October 2019 through 24 October 2019
ER -
ID: 23569258