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Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods. / Astankova, K. N.; Gorokhov, E. B.; Azarov, I. A. et al.

In: Semiconductors, Vol. 53, No. 16, 01.12.2019, p. 2064-2067.

Research output: Contribution to journal › Article › peer-review

Harvard

Astankova, KN, Gorokhov, EB, Azarov, IA, Volodin, VA & Latyshev, AV 2019, 'Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods', Semiconductors, vol. 53, no. 16, pp. 2064-2067. https://doi.org/10.1134/S1063782619120030

APA

Astankova, K. N., Gorokhov, E. B., Azarov, I. A., Volodin, V. A., & Latyshev, A. V. (2019). Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods. Semiconductors, 53(16), 2064-2067. https://doi.org/10.1134/S1063782619120030

Vancouver

Astankova KN, Gorokhov EB, Azarov IA, Volodin VA, Latyshev AV. Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods. Semiconductors. 2019 Dec 1;53(16):2064-2067. doi: 10.1134/S1063782619120030

Author

Astankova, K. N. ; Gorokhov, E. B. ; Azarov, I. A. et al. / Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods. In: Semiconductors. 2019 ; Vol. 53, No. 16. pp. 2064-2067.

BibTeX

@article{b9d352517e614de9be1e7054c81072b8,
title = "Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods",
abstract = "Abstract: Composites consisting of Ge nanoclusters embedded in GeO2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO2{Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning and spectral ellipsometry, scanning electron microscopy. It was found that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the etching of thin GeO2{Ge-NCs} heterolayers. When removal the GeO2 matrix from a thick GeO2{Ge-NCs} heterolayer, released Ge nanoclusters were arranged in a vertically ordered chains.",
keywords = "ellipsometry, nanoclusters, porous Ge, Raman spectroscopy, scanning electron microscopy",
author = "Astankova, {K. N.} and Gorokhov, {E. B.} and Azarov, {I. A.} and Volodin, {V. A.} and Latyshev, {A. V.}",
year = "2019",
month = dec,
day = "1",
doi = "10.1134/S1063782619120030",
language = "English",
volume = "53",
pages = "2064--2067",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "16",

}

RIS

TY - JOUR

T1 - Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods

AU - Astankova, K. N.

AU - Gorokhov, E. B.

AU - Azarov, I. A.

AU - Volodin, V. A.

AU - Latyshev, A. V.

PY - 2019/12/1

Y1 - 2019/12/1

N2 - Abstract: Composites consisting of Ge nanoclusters embedded in GeO2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO2{Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning and spectral ellipsometry, scanning electron microscopy. It was found that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the etching of thin GeO2{Ge-NCs} heterolayers. When removal the GeO2 matrix from a thick GeO2{Ge-NCs} heterolayer, released Ge nanoclusters were arranged in a vertically ordered chains.

AB - Abstract: Composites consisting of Ge nanoclusters embedded in GeO2 matrix were modified by selective removal of the germanium dioxide in deionized water or HF. Thin (up to 200 nm) and thick (300−1500 nm) GeO2{Ge-NCs} heterolayers were studied before and after the etching using Raman spectroscopy, scanning and spectral ellipsometry, scanning electron microscopy. It was found that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the etching of thin GeO2{Ge-NCs} heterolayers. When removal the GeO2 matrix from a thick GeO2{Ge-NCs} heterolayer, released Ge nanoclusters were arranged in a vertically ordered chains.

KW - ellipsometry

KW - nanoclusters

KW - porous Ge

KW - Raman spectroscopy

KW - scanning electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=85078432555&partnerID=8YFLogxK

U2 - 10.1134/S1063782619120030

DO - 10.1134/S1063782619120030

M3 - Article

AN - SCOPUS:85078432555

VL - 53

SP - 2064

EP - 2067

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 16

ER -

ID: 23261547