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Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition. / Perevalov, T. V.; Gritsenko, V. A.; Gutakovskii, A. K. et al.

In: JETP Letters, Vol. 109, No. 2, 01.01.2019, p. 116-120.

Research output: Contribution to journal › Article › peer-review

Harvard

Perevalov, TV, Gritsenko, VA, Gutakovskii, AK & Prosvirin, IP 2019, 'Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition', JETP Letters, vol. 109, no. 2, pp. 116-120. https://doi.org/10.1134/S0021364019020115

APA

Perevalov, T. V., Gritsenko, V. A., Gutakovskii, A. K., & Prosvirin, I. P. (2019). Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition. JETP Letters, 109(2), 116-120. https://doi.org/10.1134/S0021364019020115

Vancouver

Perevalov TV, Gritsenko VA, Gutakovskii AK, Prosvirin IP. Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition. JETP Letters. 2019 Jan 1;109(2):116-120. doi: 10.1134/S0021364019020115

Author

Perevalov, T. V. ; Gritsenko, V. A. ; Gutakovskii, A. K. et al. / Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition. In: JETP Letters. 2019 ; Vol. 109, No. 2. pp. 116-120.

BibTeX

@article{fec0889daf9d4d0a9de052c2035bea79,
title = "Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition",
abstract = " Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 1 . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO 2 and La 2 O 3 phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair. ",
author = "Perevalov, {T. V.} and Gritsenko, {V. A.} and Gutakovskii, {A. K.} and Prosvirin, {I. P.}",
year = "2019",
month = jan,
day = "1",
doi = "10.1134/S0021364019020115",
language = "English",
volume = "109",
pages = "116--120",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "2",

}

RIS

TY - JOUR

T1 - Structure of Hf 0.9 La 0.1 O 2 Ferroelectric Films Obtained by the Atomic Layer Deposition

AU - Perevalov, T. V.

AU - Gritsenko, V. A.

AU - Gutakovskii, A. K.

AU - Prosvirin, I. P.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 1 . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO 2 and La 2 O 3 phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair.

AB - Thin films of La-doped hafnium oxide synthesized by plasma-enhanced atomic layer deposition with subsequent rapid annealing have been studied. It has been found that the films under study have an orthorhombic noncentrosymmetric structure with the space group Pmn2 1 . It has been shown that these films have ferroelectric properties. The ratio of atomic concentrations of elements in a film has been determined. It has been found that the film consists of the mixture of the HfO 2 and La 2 O 3 phases. It has been shown that argon ion etching results in the generation of oxygen vacancies with a concentration of about 1 at % in the surface region of the films. Vacancies are formed primarily through the knock-out of oxygen atoms to interstitial positions with the formation of a Frenkel pair.

UR - http://www.scopus.com/inward/record.url?scp=85064804024&partnerID=8YFLogxK

U2 - 10.1134/S0021364019020115

DO - 10.1134/S0021364019020115

M3 - Article

AN - SCOPUS:85064804024

VL - 109

SP - 116

EP - 120

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 2

ER -

ID: 19647513