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Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing. / Tyschenko, I. E.; Spesivtsev, E. V.; Shklyaev, A. A. et al.

In: Semiconductors, Vol. 56, No. 3, 03.2022, p. 223-229.

Research output: Contribution to journal › Article › peer-review

Harvard

Tyschenko, IE, Spesivtsev, EV, Shklyaev, AA & Popov, VP 2022, 'Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing', Semiconductors, vol. 56, no. 3, pp. 223-229. https://doi.org/10.1134/S1063782622020166

APA

Tyschenko, I. E., Spesivtsev, E. V., Shklyaev, A. A., & Popov, V. P. (2022). Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing. Semiconductors, 56(3), 223-229. https://doi.org/10.1134/S1063782622020166

Vancouver

Tyschenko IE, Spesivtsev EV, Shklyaev AA, Popov VP. Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing. Semiconductors. 2022 Mar;56(3):223-229. doi: 10.1134/S1063782622020166

Author

Tyschenko, I. E. ; Spesivtsev, E. V. ; Shklyaev, A. A. et al. / Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing. In: Semiconductors. 2022 ; Vol. 56, No. 3. pp. 223-229.

BibTeX

@article{7fdfe5e0e3d145a0aa6aaed5548fe417,
title = "Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing",
abstract = "The thermal stability of silicon-on-insulator films with a thickness of 4.7 and 2.2 nm is studied as a function of annealing temperature in the range of Т = 800–1200°C by scanning electron microscopy and spectral ellipsometry. No signs of film melting were found; the films remain continuous over this annealing temperature range. A decrease in the thickness of the films and a change in their phase composition with an increase in temperature are discovered. According to the data of spectral ellipsometry, as the annealing temperature is increased, the content of the crystalline phase in the films decreases and the content of the amorphous phase increases. The activation energy of the process of film amorphization is estimated. The revealed properties are discussed from the viewpoint of diffusion of oxygen atoms into a silicon film and rearrangement of Si–Si bonds.",
keywords = "amorphization, nanostructures, silicon-on-insulator, thermal stability",
author = "Tyschenko, {I. E.} and Spesivtsev, {E. V.} and Shklyaev, {A. A.} and Popov, {V. P.}",
note = "Funding Information: The study was carried out under financial support of the Ministry of Education and Science of Russia (state assignment 0242-2021-0003). Publisher Copyright: {\textcopyright} 2022, Pleiades Publishing, Ltd.",
year = "2022",
month = mar,
doi = "10.1134/S1063782622020166",
language = "English",
volume = "56",
pages = "223--229",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "3",

}

RIS

TY - JOUR

T1 - Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing

AU - Tyschenko, I. E.

AU - Spesivtsev, E. V.

AU - Shklyaev, A. A.

AU - Popov, V. P.

N1 - Funding Information: The study was carried out under financial support of the Ministry of Education and Science of Russia (state assignment 0242-2021-0003). Publisher Copyright: © 2022, Pleiades Publishing, Ltd.

PY - 2022/3

Y1 - 2022/3

N2 - The thermal stability of silicon-on-insulator films with a thickness of 4.7 and 2.2 nm is studied as a function of annealing temperature in the range of Т = 800–1200°C by scanning electron microscopy and spectral ellipsometry. No signs of film melting were found; the films remain continuous over this annealing temperature range. A decrease in the thickness of the films and a change in their phase composition with an increase in temperature are discovered. According to the data of spectral ellipsometry, as the annealing temperature is increased, the content of the crystalline phase in the films decreases and the content of the amorphous phase increases. The activation energy of the process of film amorphization is estimated. The revealed properties are discussed from the viewpoint of diffusion of oxygen atoms into a silicon film and rearrangement of Si–Si bonds.

AB - The thermal stability of silicon-on-insulator films with a thickness of 4.7 and 2.2 nm is studied as a function of annealing temperature in the range of Т = 800–1200°C by scanning electron microscopy and spectral ellipsometry. No signs of film melting were found; the films remain continuous over this annealing temperature range. A decrease in the thickness of the films and a change in their phase composition with an increase in temperature are discovered. According to the data of spectral ellipsometry, as the annealing temperature is increased, the content of the crystalline phase in the films decreases and the content of the amorphous phase increases. The activation energy of the process of film amorphization is estimated. The revealed properties are discussed from the viewpoint of diffusion of oxygen atoms into a silicon film and rearrangement of Si–Si bonds.

KW - amorphization

KW - nanostructures

KW - silicon-on-insulator

KW - thermal stability

UR - http://www.scopus.com/inward/record.url?scp=85130210566&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/5135a360-40cb-32d3-b278-029aac015936/

U2 - 10.1134/S1063782622020166

DO - 10.1134/S1063782622020166

M3 - Article

AN - SCOPUS:85130210566

VL - 56

SP - 223

EP - 229

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 3

ER -

ID: 36167040