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Structural and morphological instabilities of the Si(1 1 1)-7 × 7 surface during silicon growth and etching by oxygen and selenium. / Rogilo, Dmitry; Sitnikov, Sergey; Ponomarev, Sergey et al.

In: Applied Surface Science, Vol. 540, 148269, 28.02.2021.

Research output: Contribution to journalArticlepeer-review

Harvard

Rogilo, D, Sitnikov, S, Ponomarev, S, Sheglov, D, Fedina, L & Latyshev, A 2021, 'Structural and morphological instabilities of the Si(1 1 1)-7 × 7 surface during silicon growth and etching by oxygen and selenium', Applied Surface Science, vol. 540, 148269. https://doi.org/10.1016/j.apsusc.2020.148269

APA

Rogilo, D., Sitnikov, S., Ponomarev, S., Sheglov, D., Fedina, L., & Latyshev, A. (2021). Structural and morphological instabilities of the Si(1 1 1)-7 × 7 surface during silicon growth and etching by oxygen and selenium. Applied Surface Science, 540, [148269]. https://doi.org/10.1016/j.apsusc.2020.148269

Vancouver

Rogilo D, Sitnikov S, Ponomarev S, Sheglov D, Fedina L, Latyshev A. Structural and morphological instabilities of the Si(1 1 1)-7 × 7 surface during silicon growth and etching by oxygen and selenium. Applied Surface Science. 2021 Feb 28;540:148269. doi: 10.1016/j.apsusc.2020.148269

Author

Rogilo, Dmitry ; Sitnikov, Sergey ; Ponomarev, Sergey et al. / Structural and morphological instabilities of the Si(1 1 1)-7 × 7 surface during silicon growth and etching by oxygen and selenium. In: Applied Surface Science. 2021 ; Vol. 540.

BibTeX

@article{15d25cae7a3545b8a5b78372dbd15a4e,
title = "Structural and morphological instabilities of the Si(1 1 1)-7 × 7 surface during silicon growth and etching by oxygen and selenium",
abstract = "Using in situ reflection electron microscopy and ex situ atomic force microscopy, we have studied the morphological stability of large-scale (~10–100 μm) Si(1 1 1)-7 × 7 terraces during silicon growth and etching by oxygen and selenium. On the large-scale terraces, silicon growth at substrate temperatures T = 600–770 °C and Si deposition rates R = 0.002–0.2 BL/s proceeds in multilayer mode. Based on RMS surface roughness scaling W ∝ Θβ, we have discerned three modes of morphological instability caused by (I) effective adatom diffusion along step edges at low T and R (β ≈ 0.33), (II) effective diffusion and fast step motion along disordered “1 × 1” regions in 7 × 7 domain boundaries at intermediate T and R (β ≈ 0.2), and (III) accumulation of Si adatoms in high-atom-density “1 × 1” regions on the uppermost terraces at high T and R (β ≈ 0.5). The etching of the singular Si(1 1 1)-7 × 7 surface by oxygen leads to the slow development of multilayer morphology, while selenium-induced etching preserves flat surface morphology with periodic 2D vacancy island nucleation, growth, and coalesce, which is attributed to Se adatom diffusion. On the step-bunched surface, the Si or Se adatom diffusion to the step bunches leads to the self-organization of pyramidlike or valley-like morphology during Si growth or Se-induced etching, respectively.",
keywords = "A1. Etching, A1. Morphological stability, A1. Surface processes, A3. Molecular beam epitaxy, B2. Semiconducting silicon, OXIDATION, Morphological stability, Etching, MOUND FORMATION, EPITAXY, PHASE, SI, ISLAND NUCLEATION, Molecular beam epitaxy, Semiconducting silicon, SCANNING-TUNNELING-MICROSCOPY, DIFFUSION, Surface processes, STEP PERMEABILITY, ELECTRON-MICROSCOPE",
author = "Dmitry Rogilo and Sergey Sitnikov and Sergey Ponomarev and Dmitry Sheglov and Liudmila Fedina and Alexander Latyshev",
note = "Funding Information: This research was performed on the equipment of CKP “Nanostruktury”. Experiments on Si growth were financially supported by Russian Science Foundation [grant number 19-72-30023 ], experiments on Si etching by selenium were financially supported by Russian Science Foundation [grant number 18-72-10063 ], experiments on Si etching by oxygen were financially supported by State Government Task. Publisher Copyright: {\textcopyright} 2020 Elsevier B.V. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2021",
month = feb,
day = "28",
doi = "10.1016/j.apsusc.2020.148269",
language = "English",
volume = "540",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Structural and morphological instabilities of the Si(1 1 1)-7 × 7 surface during silicon growth and etching by oxygen and selenium

AU - Rogilo, Dmitry

AU - Sitnikov, Sergey

AU - Ponomarev, Sergey

AU - Sheglov, Dmitry

AU - Fedina, Liudmila

AU - Latyshev, Alexander

N1 - Funding Information: This research was performed on the equipment of CKP “Nanostruktury”. Experiments on Si growth were financially supported by Russian Science Foundation [grant number 19-72-30023 ], experiments on Si etching by selenium were financially supported by Russian Science Foundation [grant number 18-72-10063 ], experiments on Si etching by oxygen were financially supported by State Government Task. Publisher Copyright: © 2020 Elsevier B.V. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2021/2/28

Y1 - 2021/2/28

N2 - Using in situ reflection electron microscopy and ex situ atomic force microscopy, we have studied the morphological stability of large-scale (~10–100 μm) Si(1 1 1)-7 × 7 terraces during silicon growth and etching by oxygen and selenium. On the large-scale terraces, silicon growth at substrate temperatures T = 600–770 °C and Si deposition rates R = 0.002–0.2 BL/s proceeds in multilayer mode. Based on RMS surface roughness scaling W ∝ Θβ, we have discerned three modes of morphological instability caused by (I) effective adatom diffusion along step edges at low T and R (β ≈ 0.33), (II) effective diffusion and fast step motion along disordered “1 × 1” regions in 7 × 7 domain boundaries at intermediate T and R (β ≈ 0.2), and (III) accumulation of Si adatoms in high-atom-density “1 × 1” regions on the uppermost terraces at high T and R (β ≈ 0.5). The etching of the singular Si(1 1 1)-7 × 7 surface by oxygen leads to the slow development of multilayer morphology, while selenium-induced etching preserves flat surface morphology with periodic 2D vacancy island nucleation, growth, and coalesce, which is attributed to Se adatom diffusion. On the step-bunched surface, the Si or Se adatom diffusion to the step bunches leads to the self-organization of pyramidlike or valley-like morphology during Si growth or Se-induced etching, respectively.

AB - Using in situ reflection electron microscopy and ex situ atomic force microscopy, we have studied the morphological stability of large-scale (~10–100 μm) Si(1 1 1)-7 × 7 terraces during silicon growth and etching by oxygen and selenium. On the large-scale terraces, silicon growth at substrate temperatures T = 600–770 °C and Si deposition rates R = 0.002–0.2 BL/s proceeds in multilayer mode. Based on RMS surface roughness scaling W ∝ Θβ, we have discerned three modes of morphological instability caused by (I) effective adatom diffusion along step edges at low T and R (β ≈ 0.33), (II) effective diffusion and fast step motion along disordered “1 × 1” regions in 7 × 7 domain boundaries at intermediate T and R (β ≈ 0.2), and (III) accumulation of Si adatoms in high-atom-density “1 × 1” regions on the uppermost terraces at high T and R (β ≈ 0.5). The etching of the singular Si(1 1 1)-7 × 7 surface by oxygen leads to the slow development of multilayer morphology, while selenium-induced etching preserves flat surface morphology with periodic 2D vacancy island nucleation, growth, and coalesce, which is attributed to Se adatom diffusion. On the step-bunched surface, the Si or Se adatom diffusion to the step bunches leads to the self-organization of pyramidlike or valley-like morphology during Si growth or Se-induced etching, respectively.

KW - A1. Etching

KW - A1. Morphological stability

KW - A1. Surface processes

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting silicon

KW - OXIDATION

KW - Morphological stability

KW - Etching

KW - MOUND FORMATION

KW - EPITAXY

KW - PHASE

KW - SI

KW - ISLAND NUCLEATION

KW - Molecular beam epitaxy

KW - Semiconducting silicon

KW - SCANNING-TUNNELING-MICROSCOPY

KW - DIFFUSION

KW - Surface processes

KW - STEP PERMEABILITY

KW - ELECTRON-MICROSCOPE

UR - http://www.scopus.com/inward/record.url?scp=85096182383&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2020.148269

DO - 10.1016/j.apsusc.2020.148269

M3 - Article

AN - SCOPUS:85096182383

VL - 540

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 148269

ER -

ID: 26029012