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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films. / Tyschenko, I. E.; Cherkov, A. G.; Volodin, V. A. et al.

In: Semiconductors, Vol. 51, No. 9, 01.09.2017, p. 1240-1246.

Research output: Contribution to journal › Article › peer-review

Harvard

Tyschenko, IE, Cherkov, AG, Volodin, VA & Voelskow, M 2017, 'Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films', Semiconductors, vol. 51, no. 9, pp. 1240-1246. https://doi.org/10.1134/S1063782617090226

APA

Tyschenko, I. E., Cherkov, A. G., Volodin, V. A., & Voelskow, M. (2017). Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films. Semiconductors, 51(9), 1240-1246. https://doi.org/10.1134/S1063782617090226

Vancouver

Tyschenko IE, Cherkov AG, Volodin VA, Voelskow M. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films. Semiconductors. 2017 Sept 1;51(9):1240-1246. doi: 10.1134/S1063782617090226

Author

Tyschenko, I. E. ; Cherkov, A. G. ; Volodin, V. A. et al. / Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films. In: Semiconductors. 2017 ; Vol. 51, No. 9. pp. 1240-1246.

BibTeX

@article{2c95f7f8aa264d52b3e150c933da3025,
title = "Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films",
abstract = "The systematic features of the formation of Ge nanocrystals in SiO2 thin films implanted with Ge+ ions and then subjected to high-temperature annealing (1130°C) are studied in relation to hydrostatic pressure. It is established that annealing at atmospheric pressure is accompanied by the diffusion of Ge atoms from the implantation region to the Si substrate and does not induce the formation of Ge nanocrystals. An increase in pressure during annealing yields a deceleration in the diffusion of germanium into silicon and is accompanied by the formation of twinned lamellae at the Si/SiO2 interface (at pressures of ~103 bar) or by the nucleation and growth of Ge nanocrystals (at pressures of ~104 bar) in the SiO2 film. The results are discussed on the basis of the concept of a change in the activation volume of the formation and migration of point defects under conditions of compression.",
keywords = "SILICON, DIFFUSION, PHOTOLUMINESCENCE, GERMANIUM, LAYERS",
author = "Tyschenko, {I. E.} and Cherkov, {A. G.} and Volodin, {V. A.} and M. Voelskow",
year = "2017",
month = sep,
day = "1",
doi = "10.1134/S1063782617090226",
language = "English",
volume = "51",
pages = "1240--1246",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "9",

}

RIS

TY - JOUR

T1 - Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films

AU - Tyschenko, I. E.

AU - Cherkov, A. G.

AU - Volodin, V. A.

AU - Voelskow, M.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - The systematic features of the formation of Ge nanocrystals in SiO2 thin films implanted with Ge+ ions and then subjected to high-temperature annealing (1130°C) are studied in relation to hydrostatic pressure. It is established that annealing at atmospheric pressure is accompanied by the diffusion of Ge atoms from the implantation region to the Si substrate and does not induce the formation of Ge nanocrystals. An increase in pressure during annealing yields a deceleration in the diffusion of germanium into silicon and is accompanied by the formation of twinned lamellae at the Si/SiO2 interface (at pressures of ~103 bar) or by the nucleation and growth of Ge nanocrystals (at pressures of ~104 bar) in the SiO2 film. The results are discussed on the basis of the concept of a change in the activation volume of the formation and migration of point defects under conditions of compression.

AB - The systematic features of the formation of Ge nanocrystals in SiO2 thin films implanted with Ge+ ions and then subjected to high-temperature annealing (1130°C) are studied in relation to hydrostatic pressure. It is established that annealing at atmospheric pressure is accompanied by the diffusion of Ge atoms from the implantation region to the Si substrate and does not induce the formation of Ge nanocrystals. An increase in pressure during annealing yields a deceleration in the diffusion of germanium into silicon and is accompanied by the formation of twinned lamellae at the Si/SiO2 interface (at pressures of ~103 bar) or by the nucleation and growth of Ge nanocrystals (at pressures of ~104 bar) in the SiO2 film. The results are discussed on the basis of the concept of a change in the activation volume of the formation and migration of point defects under conditions of compression.

KW - SILICON

KW - DIFFUSION

KW - PHOTOLUMINESCENCE

KW - GERMANIUM

KW - LAYERS

UR - http://www.scopus.com/inward/record.url?scp=85028769136&partnerID=8YFLogxK

U2 - 10.1134/S1063782617090226

DO - 10.1134/S1063782617090226

M3 - Article

AN - SCOPUS:85028769136

VL - 51

SP - 1240

EP - 1246

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 9915415