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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO₂ thin films

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782617090226
Final published version

I. E. Tyschenko
A. G. Cherkov
V. A. Volodin
M. Voelskow

Original language	English
Pages (from-to)	1240-1246
Number of pages	7
Journal	Semiconductors
Volume	51
Issue number	9
DOIs	https://doi.org/10.1134/S1063782617090226
Publication status	Published - 1 Sept 2017

Research areas

SILICON, DIFFUSION, PHOTOLUMINESCENCE, GERMANIUM, LAYERS

OECD FOS+WOS

ID: 9915415