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Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles. / Ivanov, Artem I.; Gutakovskii, Anton K.; Kotin, Igor A. et al.

In: Advanced Electronic Materials, Vol. 5, No. 10, 1900310, 22.08.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Ivanov, AI, Gutakovskii, AK, Kotin, IA, Soots, RA & Antonova, IV 2019, 'Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles', Advanced Electronic Materials, vol. 5, no. 10, 1900310. https://doi.org/10.1002/aelm.201900310

APA

Ivanov, A. I., Gutakovskii, A. K., Kotin, I. A., Soots, R. A., & Antonova, I. V. (2019). Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles. Advanced Electronic Materials, 5(10), [1900310]. https://doi.org/10.1002/aelm.201900310

Vancouver

Ivanov AI, Gutakovskii AK, Kotin IA, Soots RA, Antonova IV. Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles. Advanced Electronic Materials. 2019 Aug 22;5(10):1900310. doi: 10.1002/aelm.201900310

Author

Ivanov, Artem I. ; Gutakovskii, Anton K. ; Kotin, Igor A. et al. / Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles. In: Advanced Electronic Materials. 2019 ; Vol. 5, No. 10.

BibTeX

@article{84843dcb370a4935b40dd655176505d6,
title = "Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles",
abstract = "Composite films consisting of fluorinated graphene flakes with vanadium oxide (V2O5) nanoparticles exhibit a stable bipolar resistive switching effect that depends on the size of the composite particles, on the proportion between the film components, on the heat-treatment conditions of the films (or on the hydration degree of V2O5 nanoparticles), and on the area of the structures. The ON/OFF current ratio of printed crossbar structures reaches 106–109 for films 20–50 nm thick, with the switching voltage varying in the range from 1.5 to 3.7 V, 30 ns time for structure switching, and endurance characteristics up to 1.3 × 103 switching cycles without any changes in ON/OFF current ratio. A mechanism to describe the resistive switching effect implying the formation of sign-alternating electric fields in a multibarrier structure is proposed. The investigated structures are of interest for the fabrication of nonvolatile memory cells, including memory cells for flexible and printed electronics.",
keywords = "flexible electronics, fluorinated graphene, printing electronics, resistive memory, resistive switching effect, THIN-FILMS, MATRIX, MECHANISM, DEPOSITION, BEHAVIOR, MEMORY, TEMPERATURE, POLYMER, DEVICES, LAYER",
author = "Ivanov, {Artem I.} and Gutakovskii, {Anton K.} and Kotin, {Igor A.} and Soots, {Regina A.} and Antonova, {Irina V.}",
note = "Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",
year = "2019",
month = aug,
day = "22",
doi = "10.1002/aelm.201900310",
language = "English",
volume = "5",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",
number = "10",

}

RIS

TY - JOUR

T1 - Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles

AU - Ivanov, Artem I.

AU - Gutakovskii, Anton K.

AU - Kotin, Igor A.

AU - Soots, Regina A.

AU - Antonova, Irina V.

N1 - Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2019/8/22

Y1 - 2019/8/22

N2 - Composite films consisting of fluorinated graphene flakes with vanadium oxide (V2O5) nanoparticles exhibit a stable bipolar resistive switching effect that depends on the size of the composite particles, on the proportion between the film components, on the heat-treatment conditions of the films (or on the hydration degree of V2O5 nanoparticles), and on the area of the structures. The ON/OFF current ratio of printed crossbar structures reaches 106–109 for films 20–50 nm thick, with the switching voltage varying in the range from 1.5 to 3.7 V, 30 ns time for structure switching, and endurance characteristics up to 1.3 × 103 switching cycles without any changes in ON/OFF current ratio. A mechanism to describe the resistive switching effect implying the formation of sign-alternating electric fields in a multibarrier structure is proposed. The investigated structures are of interest for the fabrication of nonvolatile memory cells, including memory cells for flexible and printed electronics.

AB - Composite films consisting of fluorinated graphene flakes with vanadium oxide (V2O5) nanoparticles exhibit a stable bipolar resistive switching effect that depends on the size of the composite particles, on the proportion between the film components, on the heat-treatment conditions of the films (or on the hydration degree of V2O5 nanoparticles), and on the area of the structures. The ON/OFF current ratio of printed crossbar structures reaches 106–109 for films 20–50 nm thick, with the switching voltage varying in the range from 1.5 to 3.7 V, 30 ns time for structure switching, and endurance characteristics up to 1.3 × 103 switching cycles without any changes in ON/OFF current ratio. A mechanism to describe the resistive switching effect implying the formation of sign-alternating electric fields in a multibarrier structure is proposed. The investigated structures are of interest for the fabrication of nonvolatile memory cells, including memory cells for flexible and printed electronics.

KW - flexible electronics

KW - fluorinated graphene

KW - printing electronics

KW - resistive memory

KW - resistive switching effect

KW - THIN-FILMS

KW - MATRIX

KW - MECHANISM

KW - DEPOSITION

KW - BEHAVIOR

KW - MEMORY

KW - TEMPERATURE

KW - POLYMER

KW - DEVICES

KW - LAYER

UR - http://www.scopus.com/inward/record.url?scp=85071051465&partnerID=8YFLogxK

U2 - 10.1002/aelm.201900310

DO - 10.1002/aelm.201900310

M3 - Article

AN - SCOPUS:85071051465

VL - 5

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 10

M1 - 1900310

ER -

ID: 21345456