Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles. / Ivanov, Artem I.; Gutakovskii, Anton K.; Kotin, Igor A. и др.
в: Advanced Electronic Materials, Том 5, № 10, 1900310, 22.08.2019.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Resistive Switching Effect with ON/OFF Current Relation up to 109 in 2D Printed Composite Films of Fluorinated Graphene with V2O5 Nanoparticles
AU - Ivanov, Artem I.
AU - Gutakovskii, Anton K.
AU - Kotin, Igor A.
AU - Soots, Regina A.
AU - Antonova, Irina V.
N1 - Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/8/22
Y1 - 2019/8/22
N2 - Composite films consisting of fluorinated graphene flakes with vanadium oxide (V2O5) nanoparticles exhibit a stable bipolar resistive switching effect that depends on the size of the composite particles, on the proportion between the film components, on the heat-treatment conditions of the films (or on the hydration degree of V2O5 nanoparticles), and on the area of the structures. The ON/OFF current ratio of printed crossbar structures reaches 106–109 for films 20–50 nm thick, with the switching voltage varying in the range from 1.5 to 3.7 V, 30 ns time for structure switching, and endurance characteristics up to 1.3 × 103 switching cycles without any changes in ON/OFF current ratio. A mechanism to describe the resistive switching effect implying the formation of sign-alternating electric fields in a multibarrier structure is proposed. The investigated structures are of interest for the fabrication of nonvolatile memory cells, including memory cells for flexible and printed electronics.
AB - Composite films consisting of fluorinated graphene flakes with vanadium oxide (V2O5) nanoparticles exhibit a stable bipolar resistive switching effect that depends on the size of the composite particles, on the proportion between the film components, on the heat-treatment conditions of the films (or on the hydration degree of V2O5 nanoparticles), and on the area of the structures. The ON/OFF current ratio of printed crossbar structures reaches 106–109 for films 20–50 nm thick, with the switching voltage varying in the range from 1.5 to 3.7 V, 30 ns time for structure switching, and endurance characteristics up to 1.3 × 103 switching cycles without any changes in ON/OFF current ratio. A mechanism to describe the resistive switching effect implying the formation of sign-alternating electric fields in a multibarrier structure is proposed. The investigated structures are of interest for the fabrication of nonvolatile memory cells, including memory cells for flexible and printed electronics.
KW - flexible electronics
KW - fluorinated graphene
KW - printing electronics
KW - resistive memory
KW - resistive switching effect
KW - THIN-FILMS
KW - MATRIX
KW - MECHANISM
KW - DEPOSITION
KW - BEHAVIOR
KW - MEMORY
KW - TEMPERATURE
KW - POLYMER
KW - DEVICES
KW - LAYER
UR - http://www.scopus.com/inward/record.url?scp=85071051465&partnerID=8YFLogxK
U2 - 10.1002/aelm.201900310
DO - 10.1002/aelm.201900310
M3 - Article
AN - SCOPUS:85071051465
VL - 5
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
SN - 2199-160X
IS - 10
M1 - 1900310
ER -
ID: 21345456