Standard
Removal of Oxides from the Surface (001)InP in Ultra-High Vacuum in an Arsenic Flux. / Dmitriev, Dmitriy V.; Mitrofanov, Ivan A.; Kolosovsky, Danil A. et al.
2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society, 2020. p. 5-8 9153517 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2020-June).
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Harvard
Dmitriev, DV, Mitrofanov, IA, Kolosovsky, DA, Toropov, AI & Zhuravlev, KS 2020,
Removal of Oxides from the Surface (001)InP in Ultra-High Vacuum in an Arsenic Flux. in
2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020., 9153517, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM, vol. 2020-June, IEEE Computer Society, pp. 5-8, 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020, Chemal, Russian Federation,
29.06.2020.
https://doi.org/10.1109/EDM49804.2020.9153517APA
Dmitriev, D. V., Mitrofanov, I. A., Kolosovsky, D. A., Toropov, A. I., & Zhuravlev, K. S. (2020).
Removal of Oxides from the Surface (001)InP in Ultra-High Vacuum in an Arsenic Flux. In
2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 (pp. 5-8). [9153517] (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2020-June). IEEE Computer Society.
https://doi.org/10.1109/EDM49804.2020.9153517Vancouver
Dmitriev DV, Mitrofanov IA, Kolosovsky DA, Toropov AI, Zhuravlev KS.
Removal of Oxides from the Surface (001)InP in Ultra-High Vacuum in an Arsenic Flux. In 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society. 2020. p. 5-8. 9153517. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM). doi: 10.1109/EDM49804.2020.9153517
Author
BibTeX
@inproceedings{7617bfc4787c4589ba126abc875adfc6,
title = "Removal of Oxides from the Surface (001)InP in Ultra-High Vacuum in an Arsenic Flux",
abstract = "The process of transformation of structure and change of elemental composition of (001)InP in a flux of arsenic in ultra-high vacuum is studied in-situ by the method of reflection high-energy electron diffraction. The process of substitution of phosphorus by arsenic depending on the annealing conditions and the formation of the In$P_{x}A_{s1-x}$ layer are shown experimentally. At 500°C annealing temperature in the surface layer, the substitution of phosphorus by arsenic is 13%, at 540°C - 41%. ",
keywords = "Annealing, Indium phosphide, Phosphorous, Substitution",
author = "Dmitriev, {Dmitriy V.} and Mitrofanov, {Ivan A.} and Kolosovsky, {Danil A.} and Toropov, {Alexander I.} and Zhuravlev, {Konstantin S.}",
year = "2020",
month = jul,
day = "1",
doi = "10.1109/EDM49804.2020.9153517",
language = "English",
series = "International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM",
publisher = "IEEE Computer Society",
pages = "5--8",
booktitle = "2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020",
address = "United States",
note = "21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 ; Conference date: 29-06-2020 Through 03-07-2020",
}
RIS
TY - GEN
T1 - Removal of Oxides from the Surface (001)InP in Ultra-High Vacuum in an Arsenic Flux
AU - Dmitriev, Dmitriy V.
AU - Mitrofanov, Ivan A.
AU - Kolosovsky, Danil A.
AU - Toropov, Alexander I.
AU - Zhuravlev, Konstantin S.
PY - 2020/7/1
Y1 - 2020/7/1
N2 - The process of transformation of structure and change of elemental composition of (001)InP in a flux of arsenic in ultra-high vacuum is studied in-situ by the method of reflection high-energy electron diffraction. The process of substitution of phosphorus by arsenic depending on the annealing conditions and the formation of the In$P_{x}A_{s1-x}$ layer are shown experimentally. At 500°C annealing temperature in the surface layer, the substitution of phosphorus by arsenic is 13%, at 540°C - 41%.
AB - The process of transformation of structure and change of elemental composition of (001)InP in a flux of arsenic in ultra-high vacuum is studied in-situ by the method of reflection high-energy electron diffraction. The process of substitution of phosphorus by arsenic depending on the annealing conditions and the formation of the In$P_{x}A_{s1-x}$ layer are shown experimentally. At 500°C annealing temperature in the surface layer, the substitution of phosphorus by arsenic is 13%, at 540°C - 41%.
KW - Annealing
KW - Indium phosphide
KW - Phosphorous
KW - Substitution
UR - http://www.scopus.com/inward/record.url?scp=85090831272&partnerID=8YFLogxK
U2 - 10.1109/EDM49804.2020.9153517
DO - 10.1109/EDM49804.2020.9153517
M3 - Conference contribution
AN - SCOPUS:85090831272
T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM
SP - 5
EP - 8
BT - 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020
PB - IEEE Computer Society
T2 - 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020
Y2 - 29 June 2020 through 3 July 2020
ER -
