Research output: Contribution to journal › Article › peer-review
Relaxation of the electric current in Si3N4 : Experiment and numerical simulation. / Novikov, Yu N.; Gritsenko, V. A.
In: Physics of the Solid State, Vol. 59, No. 1, 01.01.2017, p. 47-52.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Relaxation of the electric current in Si3N4
T2 - Experiment and numerical simulation
AU - Novikov, Yu N.
AU - Gritsenko, V. A.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.
AB - The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.
KW - SILICON-NITRIDE FILMS
KW - MEMORY
KW - SEMICONDUCTOR
KW - IONIZATION
KW - TRANSPORT
KW - TRAP
UR - http://www.scopus.com/inward/record.url?scp=85013499648&partnerID=8YFLogxK
U2 - 10.1134/S1063783417010255
DO - 10.1134/S1063783417010255
M3 - Article
AN - SCOPUS:85013499648
VL - 59
SP - 47
EP - 52
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 1
ER -
ID: 10305972