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Relaxation of the electric current in Si₃N₄: Experiment and numerical simulation

Research output: Contribution to journal › Article › peer-review

Department of Physics

DOI

https://doi.org/10.1134/S1063783417010255
Final published version

Yu N. Novikov
V. A. Gritsenko

Original language	English
Pages (from-to)	47-52
Number of pages	6
Journal	Physics of the Solid State
Volume	59
Issue number	1
DOIs	https://doi.org/10.1134/S1063783417010255
Publication status	Published - 1 Jan 2017

OECD FOS+WOS

Research areas

SILICON-NITRIDE FILMS, MEMORY, SEMICONDUCTOR, IONIZATION, TRANSPORT, TRAP

ID: 10305972