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Relaxation of the electric current in Si3N4 : Experiment and numerical simulation. / Novikov, Yu N.; Gritsenko, V. A.

в: Physics of the Solid State, Том 59, № 1, 01.01.2017, стр. 47-52.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Novikov, YN & Gritsenko, VA 2017, 'Relaxation of the electric current in Si3N4: Experiment and numerical simulation', Physics of the Solid State, Том. 59, № 1, стр. 47-52. https://doi.org/10.1134/S1063783417010255

APA

Novikov, Y. N., & Gritsenko, V. A. (2017). Relaxation of the electric current in Si3N4: Experiment and numerical simulation. Physics of the Solid State, 59(1), 47-52. https://doi.org/10.1134/S1063783417010255

Vancouver

Novikov YN, Gritsenko VA. Relaxation of the electric current in Si3N4: Experiment and numerical simulation. Physics of the Solid State. 2017 янв. 1;59(1):47-52. doi: 10.1134/S1063783417010255

Author

Novikov, Yu N. ; Gritsenko, V. A. / Relaxation of the electric current in Si3N4 : Experiment and numerical simulation. в: Physics of the Solid State. 2017 ; Том 59, № 1. стр. 47-52.

BibTeX

@article{bb8f4873c7524ecf8d6df178c6749fd1,
title = "Relaxation of the electric current in Si3N4: Experiment and numerical simulation",
abstract = "The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.",
keywords = "SILICON-NITRIDE FILMS, MEMORY, SEMICONDUCTOR, IONIZATION, TRANSPORT, TRAP",
author = "Novikov, {Yu N.} and Gritsenko, {V. A.}",
year = "2017",
month = jan,
day = "1",
doi = "10.1134/S1063783417010255",
language = "English",
volume = "59",
pages = "47--52",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "PLEIADES PUBLISHING INC",
number = "1",

}

RIS

TY - JOUR

T1 - Relaxation of the electric current in Si3N4

T2 - Experiment and numerical simulation

AU - Novikov, Yu N.

AU - Gritsenko, V. A.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.

AB - The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.

KW - SILICON-NITRIDE FILMS

KW - MEMORY

KW - SEMICONDUCTOR

KW - IONIZATION

KW - TRANSPORT

KW - TRAP

UR - http://www.scopus.com/inward/record.url?scp=85013499648&partnerID=8YFLogxK

U2 - 10.1134/S1063783417010255

DO - 10.1134/S1063783417010255

M3 - Article

AN - SCOPUS:85013499648

VL - 59

SP - 47

EP - 52

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 1

ER -

ID: 10305972