Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO₂ Surface Films. / Feklistov, K. V.; Cherkov, A. G.; Popov, V. P. et al.

In: Semiconductors, Vol. 52, No. 13, 01.12.2018, p. 1696-1703.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{e66869eb7ddc401693b1d64f76f4f956,

title = "Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films",

abstract = "Abstract: Using analytical high-resolution electron microscopy, the Si structure and the redistribution of Er and O recoil atoms embedded in thin (~10 nm) surface layers by Ar+ implantation with an energy of 250–290 keV and a dose of 1 × 1016 cm–2 through Er and SiO2 films, respectively, and subsequent annealing are studied. It is established that Si recrystallization fails at a distance of ~20 nm from the surface, where the erbium concentration of 5 × 1019 cm–3 critical for failure is achieved at T = 950°C. It disproves the generally accepted model of Er-atom transfer by the recrystallization front into SiO2 on the surface. Instead, it is shown that the redistribution of O recoil atoms to the initial oxide during annealing for immobile Er atoms provides the formation of surface-inhomogeneous erbium phases in such a way that the oxygen-enriched Er–Si–O phase turns out to be concentrated in the oxide, while the depleted Er–Si phase remains in Si. It explains the partial loss of implanted Er after removal of the oxide together with the Er–Si–O phase. It was shown that the formation of a high density of microtwins (locally up to 1013 cm–2) is associated with the formation of Ar bubbles and clusters, which is atypical for (100)–Si recrystallization.",

keywords = "SOLID-PHASE EPITAXY, 1.54 MU-M, ELECTRON-MICROSCOPY, OPTICAL ACTIVATION, AMORPHOUS LAYERS, CRYSTAL SILICON, ELECTROLUMINESCENCE, EXCITATION, REGROWTH, DEFECTS",

author = "Feklistov, {K. V.} and Cherkov, {A. G.} and Popov, {V. P.} and Fedina, {L. I.}",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",

year = "2018",

month = dec,

day = "1",

doi = "10.1134/S1063782618130055",

language = "English",

volume = "52",

pages = "1696--1703",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "13",

}

RIS

TY - JOUR

T1 - Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films

AU - Feklistov, K. V.

AU - Cherkov, A. G.

AU - Popov, V. P.

AU - Fedina, L. I.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Abstract: Using analytical high-resolution electron microscopy, the Si structure and the redistribution of Er and O recoil atoms embedded in thin (~10 nm) surface layers by Ar+ implantation with an energy of 250–290 keV and a dose of 1 × 1016 cm–2 through Er and SiO2 films, respectively, and subsequent annealing are studied. It is established that Si recrystallization fails at a distance of ~20 nm from the surface, where the erbium concentration of 5 × 1019 cm–3 critical for failure is achieved at T = 950°C. It disproves the generally accepted model of Er-atom transfer by the recrystallization front into SiO2 on the surface. Instead, it is shown that the redistribution of O recoil atoms to the initial oxide during annealing for immobile Er atoms provides the formation of surface-inhomogeneous erbium phases in such a way that the oxygen-enriched Er–Si–O phase turns out to be concentrated in the oxide, while the depleted Er–Si phase remains in Si. It explains the partial loss of implanted Er after removal of the oxide together with the Er–Si–O phase. It was shown that the formation of a high density of microtwins (locally up to 1013 cm–2) is associated with the formation of Ar bubbles and clusters, which is atypical for (100)–Si recrystallization.

AB - Abstract: Using analytical high-resolution electron microscopy, the Si structure and the redistribution of Er and O recoil atoms embedded in thin (~10 nm) surface layers by Ar+ implantation with an energy of 250–290 keV and a dose of 1 × 1016 cm–2 through Er and SiO2 films, respectively, and subsequent annealing are studied. It is established that Si recrystallization fails at a distance of ~20 nm from the surface, where the erbium concentration of 5 × 1019 cm–3 critical for failure is achieved at T = 950°C. It disproves the generally accepted model of Er-atom transfer by the recrystallization front into SiO2 on the surface. Instead, it is shown that the redistribution of O recoil atoms to the initial oxide during annealing for immobile Er atoms provides the formation of surface-inhomogeneous erbium phases in such a way that the oxygen-enriched Er–Si–O phase turns out to be concentrated in the oxide, while the depleted Er–Si phase remains in Si. It explains the partial loss of implanted Er after removal of the oxide together with the Er–Si–O phase. It was shown that the formation of a high density of microtwins (locally up to 1013 cm–2) is associated with the formation of Ar bubbles and clusters, which is atypical for (100)–Si recrystallization.

KW - SOLID-PHASE EPITAXY

KW - 1.54 MU-M

KW - ELECTRON-MICROSCOPY

KW - OPTICAL ACTIVATION

KW - AMORPHOUS LAYERS

KW - CRYSTAL SILICON

KW - ELECTROLUMINESCENCE

KW - EXCITATION

KW - REGROWTH

KW - DEFECTS

UR - http://www.scopus.com/inward/record.url?scp=85059088802&partnerID=8YFLogxK

U2 - 10.1134/S1063782618130055

DO - 10.1134/S1063782618130055

M3 - Article

AN - SCOPUS:85059088802

VL - 52

SP - 1696

EP - 1703

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 13

ER -

ID: 18066701