TY - JOUR

T1 - Polymorphic States in the Electron-Beam Exposure-Induced CaSi2 Film Growth at the CaF2 Epitaxy on Si

AU - Kacyuba, A. V.

AU - Dvurechenskii, A. V.

AU - Kamaev, G. N.

AU - Volodin, V. A.

N1 - This work was carried out within the framework of the state assignment of the Ministry of Science and Higher Education of the Russian Federation (project no. FWGW-2025-0023 “Control of the functional properties of nanophotonics and nanoelectronics components based on semiconductor nanostructures”). Polymorphic States in the Electron-Beam Exposure-Induced CaSi2 Film Growth at the CaF2 Epitaxy on Si / A. V. Kacyuba, A. V. Dvurechenskii, G. N. Kamaev, V. A. Volodin // Journal of Surface Investigation: X-Ray, Synchrotron and Neutron Techniques. – 2025. – Vol. 19, No. 2. – P. 504-509. – DOI 10.1134/S1027451025700752.

PY - 2025/9/10

Y1 - 2025/9/10

N2 - Abstract: The results of the study of the crystal structure of CaSi2 films and their polymorphic transformations, depending on production conditions involving radiation-stimulated CaSi2 formation during heat treatment of a CaF2 layer, are presented in this contribution. CaSi2 films with space group were obtained by exposing the CaF2 layer to an electron beam, both directly during the epitaxial growth of CaF2 and after the formation of CaF2 films of various thicknesses. In both cases, at the initial stage of epitaxial growth with thin CaF2 films (10 nm), the resulting CaSi2 film is characterized by space group with a three-layer translational period of silicon substructures in the unit cell (tr3). As the CaF2 film thickness increases, the CaSi2 film formed via the radiation-stimulated process is characterized by space group with a six-layer translational period of silicon substructures in the unit cell (tr6). Analysis of the results obtained in this work, together with literature data, leads to the conclusion that the incorporation of F into the silicide lattice stabilizes the formation of CaSi2 films with space group corresponding to a specific polytype.

AB - Abstract: The results of the study of the crystal structure of CaSi2 films and their polymorphic transformations, depending on production conditions involving radiation-stimulated CaSi2 formation during heat treatment of a CaF2 layer, are presented in this contribution. CaSi2 films with space group were obtained by exposing the CaF2 layer to an electron beam, both directly during the epitaxial growth of CaF2 and after the formation of CaF2 films of various thicknesses. In both cases, at the initial stage of epitaxial growth with thin CaF2 films (10 nm), the resulting CaSi2 film is characterized by space group with a three-layer translational period of silicon substructures in the unit cell (tr3). As the CaF2 film thickness increases, the CaSi2 film formed via the radiation-stimulated process is characterized by space group with a six-layer translational period of silicon substructures in the unit cell (tr6). Analysis of the results obtained in this work, together with literature data, leads to the conclusion that the incorporation of F into the silicide lattice stabilizes the formation of CaSi2 films with space group corresponding to a specific polytype.

KW - calcium compounds

KW - crystal structure

KW - electron irradiation

KW - molecular-beam epitaxy

KW - nanostructures

KW - polymorphs CaSi2

KW - semiconductors

KW - silicon

UR - https://www.mendeley.com/catalogue/9c01bc9f-afeb-38c8-a940-1b8d7eba8fe7/

UR - https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=105015406479&origin=inward

UR - https://www.elibrary.ru/item.asp?id=82850158

U2 - 10.1134/S1027451025700752

DO - 10.1134/S1027451025700752

M3 - Article

VL - 19

SP - 504

EP - 509

JO - Journal of Surface Investigation

JF - Journal of Surface Investigation

SN - 1027-4510

IS - 2

ER -