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Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes. / Azarov, I. A.; Shvets, V. A.; Dulin, S. A. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 53, No. 6, 01.11.2017, p. 630-638.

Research output: Contribution to journal › Article › peer-review

Harvard

Azarov, IA, Shvets, VA, Dulin, SA, Mikhailov, NN, Dvoretskii, SA, Ikusov, DG, Uzhakov, IN & Rykhlitskii, SV 2017, 'Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes', Optoelectronics, Instrumentation and Data Processing, vol. 53, no. 6, pp. 630-638. https://doi.org/10.3103/S8756699017060140

APA

Azarov, I. A., Shvets, V. A., Dulin, S. A., Mikhailov, N. N., Dvoretskii, S. A., Ikusov, D. G., Uzhakov, I. N., & Rykhlitskii, S. V. (2017). Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes. Optoelectronics, Instrumentation and Data Processing, 53(6), 630-638. https://doi.org/10.3103/S8756699017060140

Vancouver

Azarov IA, Shvets VA, Dulin SA, Mikhailov NN, Dvoretskii SA, Ikusov DG et al. Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes. Optoelectronics, Instrumentation and Data Processing. 2017 Nov 1;53(6):630-638. doi: 10.3103/S8756699017060140

Author

Azarov, I. A. ; Shvets, V. A. ; Dulin, S. A. et al. / Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes. In: Optoelectronics, Instrumentation and Data Processing. 2017 ; Vol. 53, No. 6. pp. 630-638.

BibTeX

@article{358dd59cb7e14f96b0cf14914e48cb10,
title = "Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes",
abstract = "Principal issues of using pyrometry for temperature monitoring in low-temperature processes in the technology of production of semiconductor structures are considered by an example of growing mercury–cadmium–telluride (MCT) layers on the GaAs substrate by the method of molecular beam epitaxy. Optical and thermophysical models are proposed to describe the processes of radiant heat transfer in a vacuum chamber. Based on these models, it is demonstrated that radiation from the heater and the signal reflected from the chamber walls, which are comparable in magnitude with the measured radiation emitted by the sample, should be taken into account in interpreting data measured by a pyrometer. Methods of useful signal identification are found. Experiments on temperature measurement by a pyrometer mounted on the MCT growth chamber are performed. Results of these experiments are in good agreement with theoretical predictions.",
keywords = "growth temperature, molecular beam epitaxy of MCT, polarization pyrometry, radiant heat transfer, thermal radiation",
author = "Azarov, {I. A.} and Shvets, {V. A.} and Dulin, {S. A.} and Mikhailov, {N. N.} and Dvoretskii, {S. A.} and Ikusov, {D. G.} and Uzhakov, {I. N.} and Rykhlitskii, {S. V.}",
year = "2017",
month = nov,
day = "1",
doi = "10.3103/S8756699017060140",
language = "English",
volume = "53",
pages = "630--638",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes

AU - Azarov, I. A.

AU - Shvets, V. A.

AU - Dulin, S. A.

AU - Mikhailov, N. N.

AU - Dvoretskii, S. A.

AU - Ikusov, D. G.

AU - Uzhakov, I. N.

AU - Rykhlitskii, S. V.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - Principal issues of using pyrometry for temperature monitoring in low-temperature processes in the technology of production of semiconductor structures are considered by an example of growing mercury–cadmium–telluride (MCT) layers on the GaAs substrate by the method of molecular beam epitaxy. Optical and thermophysical models are proposed to describe the processes of radiant heat transfer in a vacuum chamber. Based on these models, it is demonstrated that radiation from the heater and the signal reflected from the chamber walls, which are comparable in magnitude with the measured radiation emitted by the sample, should be taken into account in interpreting data measured by a pyrometer. Methods of useful signal identification are found. Experiments on temperature measurement by a pyrometer mounted on the MCT growth chamber are performed. Results of these experiments are in good agreement with theoretical predictions.

AB - Principal issues of using pyrometry for temperature monitoring in low-temperature processes in the technology of production of semiconductor structures are considered by an example of growing mercury–cadmium–telluride (MCT) layers on the GaAs substrate by the method of molecular beam epitaxy. Optical and thermophysical models are proposed to describe the processes of radiant heat transfer in a vacuum chamber. Based on these models, it is demonstrated that radiation from the heater and the signal reflected from the chamber walls, which are comparable in magnitude with the measured radiation emitted by the sample, should be taken into account in interpreting data measured by a pyrometer. Methods of useful signal identification are found. Experiments on temperature measurement by a pyrometer mounted on the MCT growth chamber are performed. Results of these experiments are in good agreement with theoretical predictions.

KW - growth temperature

KW - molecular beam epitaxy of MCT

KW - polarization pyrometry

KW - radiant heat transfer

KW - thermal radiation

UR - http://www.scopus.com/inward/record.url?scp=85042688019&partnerID=8YFLogxK

U2 - 10.3103/S8756699017060140

DO - 10.3103/S8756699017060140

M3 - Article

AN - SCOPUS:85042688019

VL - 53

SP - 630

EP - 638

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 6

ER -

ID: 10180809