Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	630-638
Number of pages	9
Journal	Optoelectronics, Instrumentation and Data Processing
Volume	53
Issue number	6
DOIs	https://doi.org/10.3103/S8756699017060140
Publication status	Published - 1 Nov 2017

growth temperature, molecular beam epitaxy of MCT, polarization pyrometry, radiant heat transfer, thermal radiation

ID: 10180809