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Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures. / Anikin, K. V.; Milekhin, A. G.; Rahaman, M. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 55, No. 5, 01.09.2019, p. 488-494.

Research output: Contribution to journal › Article › peer-review

Harvard

Anikin, KV, Milekhin, AG, Rahaman, M, Duda, TA, Milekhin, IA, Rodyakina, EE, Vasiliev, RB, Dzhagan, VM, Zahn, DRT & Latyshev, AV 2019, 'Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures', Optoelectronics, Instrumentation and Data Processing, vol. 55, no. 5, pp. 488-494. https://doi.org/10.3103/S875669901905011X

APA

Anikin, K. V., Milekhin, A. G., Rahaman, M., Duda, T. A., Milekhin, I. A., Rodyakina, E. E., Vasiliev, R. B., Dzhagan, V. M., Zahn, D. R. T., & Latyshev, A. V. (2019). Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures. Optoelectronics, Instrumentation and Data Processing, 55(5), 488-494. https://doi.org/10.3103/S875669901905011X

Vancouver

Anikin KV, Milekhin AG, Rahaman M, Duda TA, Milekhin IA, Rodyakina EE et al. Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures. Optoelectronics, Instrumentation and Data Processing. 2019 Sept 1;55(5):488-494. doi: 10.3103/S875669901905011X

Author

Anikin, K. V. ; Milekhin, A. G. ; Rahaman, M. et al. / Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures. In: Optoelectronics, Instrumentation and Data Processing. 2019 ; Vol. 55, No. 5. pp. 488-494.

BibTeX

@article{d4f6d07c782f4eca86981268d261738a,
title = "Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures",
abstract = "Multicomponent semiconductor nanostructures were studied by local spectral analysis based on surface-enhanced Raman scattering by semiconductor nanostructures located on the surface of an array of Au nanoclusters near the metallized tip of an atomic force microscope. In the gap between the metal nanoclusters and the tip, where a semiconductor nanostructure is located, there is a strong increase in the local electric field (hot spot), resulting in a dramatic enhancement of the Raman scattering signal. An unprecedented enhancement of the Raman scattering signal by two-dimensional (over 108 for MoS2) and zero-dimensional (106 for CdSe nanocrystals) semiconductor nanostructures was achieved. The use of the method for mapping the Raman scattering response of a multicomponent system of MoS2 and CdSe made it possible to identify components with a spatial resolution far exceeding the diffraction limit.",
keywords = "nanostructures, phonons, plasmons, quantum dots, surface-enhanced Raman scattering of light, two-dimensional structures",
author = "Anikin, {K. V.} and Milekhin, {A. G.} and M. Rahaman and Duda, {T. A.} and Milekhin, {I. A.} and Rodyakina, {E. E.} and Vasiliev, {R. B.} and Dzhagan, {V. M.} and Zahn, {D. R.T.} and Latyshev, {A. V.}",
year = "2019",
month = sep,
day = "1",
doi = "10.3103/S875669901905011X",
language = "English",
volume = "55",
pages = "488--494",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Plasmon-Enhanced Near-Field Optical Spectroscopy of Multicomponent Semiconductor Nanostructures

AU - Anikin, K. V.

AU - Milekhin, A. G.

AU - Rahaman, M.

AU - Duda, T. A.

AU - Milekhin, I. A.

AU - Rodyakina, E. E.

AU - Vasiliev, R. B.

AU - Dzhagan, V. M.

AU - Zahn, D. R.T.

AU - Latyshev, A. V.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - Multicomponent semiconductor nanostructures were studied by local spectral analysis based on surface-enhanced Raman scattering by semiconductor nanostructures located on the surface of an array of Au nanoclusters near the metallized tip of an atomic force microscope. In the gap between the metal nanoclusters and the tip, where a semiconductor nanostructure is located, there is a strong increase in the local electric field (hot spot), resulting in a dramatic enhancement of the Raman scattering signal. An unprecedented enhancement of the Raman scattering signal by two-dimensional (over 108 for MoS2) and zero-dimensional (106 for CdSe nanocrystals) semiconductor nanostructures was achieved. The use of the method for mapping the Raman scattering response of a multicomponent system of MoS2 and CdSe made it possible to identify components with a spatial resolution far exceeding the diffraction limit.

AB - Multicomponent semiconductor nanostructures were studied by local spectral analysis based on surface-enhanced Raman scattering by semiconductor nanostructures located on the surface of an array of Au nanoclusters near the metallized tip of an atomic force microscope. In the gap between the metal nanoclusters and the tip, where a semiconductor nanostructure is located, there is a strong increase in the local electric field (hot spot), resulting in a dramatic enhancement of the Raman scattering signal. An unprecedented enhancement of the Raman scattering signal by two-dimensional (over 108 for MoS2) and zero-dimensional (106 for CdSe nanocrystals) semiconductor nanostructures was achieved. The use of the method for mapping the Raman scattering response of a multicomponent system of MoS2 and CdSe made it possible to identify components with a spatial resolution far exceeding the diffraction limit.

KW - nanostructures

KW - phonons

KW - plasmons

KW - quantum dots

KW - surface-enhanced Raman scattering of light

KW - two-dimensional structures

UR - http://www.scopus.com/inward/record.url?scp=85078327865&partnerID=8YFLogxK

U2 - 10.3103/S875669901905011X

DO - 10.3103/S875669901905011X

M3 - Article

AN - SCOPUS:85078327865

VL - 55

SP - 488

EP - 494

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 5

ER -

ID: 23262435