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Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence. / Milakhin, Denis S.; Malin, Timur V.; Mansurov, Vladimir G. et al.

2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society, 2020. p. 14-18 9153543 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2020-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Milakhin, DS, Malin, TV, Mansurov, VG, Galitsyn, YG & Zhuravlev, KS 2020, Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence. in 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020., 9153543, International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM, vol. 2020-June, IEEE Computer Society, pp. 14-18, 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020, Chemal, Russian Federation, 29.06.2020. https://doi.org/10.1109/EDM49804.2020.9153543

APA

Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., & Zhuravlev, K. S. (2020). Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence. In 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 (pp. 14-18). [9153543] (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM; Vol. 2020-June). IEEE Computer Society. https://doi.org/10.1109/EDM49804.2020.9153543

Vancouver

Milakhin DS, Malin TV, Mansurov VG, Galitsyn YG, Zhuravlev KS. Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence. In 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society. 2020. p. 14-18. 9153543. (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM). doi: 10.1109/EDM49804.2020.9153543

Author

Milakhin, Denis S. ; Malin, Timur V. ; Mansurov, Vladimir G. et al. / Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence. 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020. IEEE Computer Society, 2020. pp. 14-18 (International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM).

BibTeX

@inproceedings{6b647d0a64da4de6b907baf2802b8335,
title = "Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence",
abstract = "In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation at the optimum stage of completion the A1N crystalline phase about one monolayer is formed on the surface. The A1N buffer layer growth under conditions of optimal stage of nitridation process completion is characterized by a smooth surface morphology and better crystalline perfection compared to A1N growth without nitridation or with excessive sapphire nitridation. ",
keywords = "AlN, Inversion domains, NH3-MBE, Nitridation",
author = "Milakhin, {Denis S.} and Malin, {Timur V.} and Mansurov, {Vladimir G.} and Galitsyn, {Yury G.} and Zhuravlev, {Konstantin S.}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020 ; Conference date: 29-06-2020 Through 03-07-2020",
year = "2020",
month = jul,
day = "1",
doi = "10.1109/EDM49804.2020.9153543",
language = "English",
series = "International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM",
publisher = "IEEE Computer Society",
pages = "14--18",
booktitle = "2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020",
address = "United States",

}

RIS

TY - GEN

T1 - Optimal stage determination of sapphire nitridation process completion under high-energy electron beam influence

AU - Milakhin, Denis S.

AU - Malin, Timur V.

AU - Mansurov, Vladimir G.

AU - Galitsyn, Yury G.

AU - Zhuravlev, Konstantin S.

N1 - Publisher Copyright: © 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/7/1

Y1 - 2020/7/1

N2 - In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation at the optimum stage of completion the A1N crystalline phase about one monolayer is formed on the surface. The A1N buffer layer growth under conditions of optimal stage of nitridation process completion is characterized by a smooth surface morphology and better crystalline perfection compared to A1N growth without nitridation or with excessive sapphire nitridation.

AB - In this work, using the RHEED technique, the optimal stage of sapphire nitridation completeness was determined taking into account the electron beam influence on a nitridation process. It was found that as a result of the sapphire surface nitridation at the optimum stage of completion the A1N crystalline phase about one monolayer is formed on the surface. The A1N buffer layer growth under conditions of optimal stage of nitridation process completion is characterized by a smooth surface morphology and better crystalline perfection compared to A1N growth without nitridation or with excessive sapphire nitridation.

KW - AlN

KW - Inversion domains

KW - NH3-MBE

KW - Nitridation

UR - http://www.scopus.com/inward/record.url?scp=85090827469&partnerID=8YFLogxK

U2 - 10.1109/EDM49804.2020.9153543

DO - 10.1109/EDM49804.2020.9153543

M3 - Conference contribution

AN - SCOPUS:85090827469

T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

SP - 14

EP - 18

BT - 2020 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020

PB - IEEE Computer Society

T2 - 21st International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2020

Y2 - 29 June 2020 through 3 July 2020

ER -

ID: 25292578