Research output: Contribution to journal › Article › peer-review
Optical Properties of TiO2 Films Deposited by Reactive Electron Beam Sputtering. / Kruchinin, V. N.; Perevalov, T. V.; Atuchin, V. V. et al.
In: Journal of Electronic Materials, Vol. 46, No. 10, 01.10.2017, p. 6089-6095.Research output: Contribution to journal › Article › peer-review
}
TY - JOUR
T1 - Optical Properties of TiO2 Films Deposited by Reactive Electron Beam Sputtering
AU - Kruchinin, V. N.
AU - Perevalov, T. V.
AU - Atuchin, V. V.
AU - Gritsenko, V. A.
AU - Komonov, A. I.
AU - Korolkov, I. V.
AU - Pokrovsky, L. D.
AU - Shih, Cheng Wei
AU - Chin, Albert
PY - 2017/10/1
Y1 - 2017/10/1
N2 - Titanium dioxide (anatase, a-TiO2) films have been prepared by electron beam sputtering of a TiO2 target in reactive atmosphere and their structural, microstructural, and optical properties were evaluated by reflection high-energy electron diffraction (RHEED) and x-ray diffraction (XRD) analyses, atomic force microscopy (AFM), and spectroscopic ellipsometry (SE). Different reflection models for determination of film optical parameters were tested and compared. The dispersive optical parameters were defined using the Tauc–Lorentz model by SE in the photon energy range of E = 1.12–4.96 eV. The films were transparent at E < 3 eV, but noticeable absorption was detected at E > 3 eV. The bandgap was estimated at the level of Eg ≈ 3.44 eV.
AB - Titanium dioxide (anatase, a-TiO2) films have been prepared by electron beam sputtering of a TiO2 target in reactive atmosphere and their structural, microstructural, and optical properties were evaluated by reflection high-energy electron diffraction (RHEED) and x-ray diffraction (XRD) analyses, atomic force microscopy (AFM), and spectroscopic ellipsometry (SE). Different reflection models for determination of film optical parameters were tested and compared. The dispersive optical parameters were defined using the Tauc–Lorentz model by SE in the photon energy range of E = 1.12–4.96 eV. The films were transparent at E < 3 eV, but noticeable absorption was detected at E > 3 eV. The bandgap was estimated at the level of Eg ≈ 3.44 eV.
KW - AFM
KW - film
KW - optical constant
KW - RHEED
KW - spectroscopic ellipsometry
KW - TiO
KW - THIN-FILMS
KW - SILICON
KW - THERMAL-OXIDATION
KW - DIELECTRICS
KW - RUTILE TIO2
KW - SURFACE
KW - ANATASE
KW - OXIDES
KW - ABSORPTION
KW - TITANIUM-DIOXIDE
KW - TiO2
UR - http://www.scopus.com/inward/record.url?scp=85019218849&partnerID=8YFLogxK
U2 - 10.1007/s11664-017-5552-3
DO - 10.1007/s11664-017-5552-3
M3 - Article
AN - SCOPUS:85019218849
VL - 46
SP - 6089
EP - 6095
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 10
ER -
ID: 9078860