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Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity. / Bokhan, P. A.; Fateev, N. V.; Malin, T. V. et al.

In: Optical Materials, Vol. 105, 109879, 07.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Bokhan, PA, Fateev, NV, Malin, TV, Osinnykh, IV, Zakrevsky, DE & Zhuravlev, KS 2020, 'Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity', Optical Materials, vol. 105, 109879. https://doi.org/10.1016/j.optmat.2020.109879

APA

Bokhan, P. A., Fateev, N. V., Malin, T. V., Osinnykh, I. V., Zakrevsky, D. E., & Zhuravlev, K. S. (2020). Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity. Optical Materials, 105, [109879]. https://doi.org/10.1016/j.optmat.2020.109879

Vancouver

Bokhan PA, Fateev NV, Malin TV, Osinnykh IV, Zakrevsky DE, Zhuravlev KS. Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity. Optical Materials. 2020 Jul;105:109879. doi: 10.1016/j.optmat.2020.109879

Author

Bokhan, P. A. ; Fateev, N. V. ; Malin, T. V. et al. / Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity. In: Optical Materials. 2020 ; Vol. 105.

BibTeX

@article{648537bbe30b48b2bff88e2a0869826d,
title = "Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity",
abstract = "The pulse lasing in the broadband spectral range 420–590 nm was obtained from two squeezed together heavily Si doped Al0.74Ga0.26N/AlN/Al2O3 structures with external cavity under pump radiation with λp = 266 nm wavelength. These structures were grown by molecular beam epitaxy on (0001) oriented thick sapphire substrates. Stimulated emission at room temperature was observed with optical pumping thresholds 50 kW/cm2 in the semiconfocal cavity. The linear transverse-electric polarization dominates in the output emission. The optical gain coefficients values of (0.12–6) × 103 cm−1 for Al0.74Ga0.26N:Si films with inhomogeneous luminescence broadening were measured at 10–600 kW/cm2 pump power density radiation with 266 nm wavelength, 8 ns pulse duration and 10 Hz repetition rate.",
keywords = "Donor-acceptor pair transitions, Doped AlGaN film, External cavity, Lasing threshold, Optical gain, Stimulated emission, LUMINESCENCE",
author = "Bokhan, {P. A.} and Fateev, {N. V.} and Malin, {T. V.} and Osinnykh, {I. V.} and Zakrevsky, {Dm E.} and Zhuravlev, {K. S.}",
year = "2020",
month = jul,
doi = "10.1016/j.optmat.2020.109879",
language = "English",
volume = "105",
journal = "Optical Materials",
issn = "0925-3467",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Optical gain and stimulated emission in optically pumped heavily doped Al0.74Ga0.26N:Si structures with external cavity

AU - Bokhan, P. A.

AU - Fateev, N. V.

AU - Malin, T. V.

AU - Osinnykh, I. V.

AU - Zakrevsky, Dm E.

AU - Zhuravlev, K. S.

PY - 2020/7

Y1 - 2020/7

N2 - The pulse lasing in the broadband spectral range 420–590 nm was obtained from two squeezed together heavily Si doped Al0.74Ga0.26N/AlN/Al2O3 structures with external cavity under pump radiation with λp = 266 nm wavelength. These structures were grown by molecular beam epitaxy on (0001) oriented thick sapphire substrates. Stimulated emission at room temperature was observed with optical pumping thresholds 50 kW/cm2 in the semiconfocal cavity. The linear transverse-electric polarization dominates in the output emission. The optical gain coefficients values of (0.12–6) × 103 cm−1 for Al0.74Ga0.26N:Si films with inhomogeneous luminescence broadening were measured at 10–600 kW/cm2 pump power density radiation with 266 nm wavelength, 8 ns pulse duration and 10 Hz repetition rate.

AB - The pulse lasing in the broadband spectral range 420–590 nm was obtained from two squeezed together heavily Si doped Al0.74Ga0.26N/AlN/Al2O3 structures with external cavity under pump radiation with λp = 266 nm wavelength. These structures were grown by molecular beam epitaxy on (0001) oriented thick sapphire substrates. Stimulated emission at room temperature was observed with optical pumping thresholds 50 kW/cm2 in the semiconfocal cavity. The linear transverse-electric polarization dominates in the output emission. The optical gain coefficients values of (0.12–6) × 103 cm−1 for Al0.74Ga0.26N:Si films with inhomogeneous luminescence broadening were measured at 10–600 kW/cm2 pump power density radiation with 266 nm wavelength, 8 ns pulse duration and 10 Hz repetition rate.

KW - Donor-acceptor pair transitions

KW - Doped AlGaN film

KW - External cavity

KW - Lasing threshold

KW - Optical gain

KW - Stimulated emission

KW - LUMINESCENCE

UR - http://www.scopus.com/inward/record.url?scp=85082745241&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2020.109879

DO - 10.1016/j.optmat.2020.109879

M3 - Article

AN - SCOPUS:85082745241

VL - 105

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

M1 - 109879

ER -

ID: 23949617